LED (light-emitting diode) chip with reflector as well as manufacturing method of LED chip

An LED chip and manufacturing method technology, applied in electrical components, circuits, semiconductor devices and other directions, can solve the problems of affecting the light output efficiency of the chip, easy to age, low reflectivity of the bracket, etc., to avoid poor lateral reflection effect, avoid aging, The effect of improving light extraction efficiency

Active Publication Date: 2018-06-29
FOSHAN NATIONSTAR SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing support has low reflectivity and is prone to aging, which seriously affects the light extraction efficiency of the chip

Method used

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  • LED (light-emitting diode) chip with reflector as well as manufacturing method of LED chip
  • LED (light-emitting diode) chip with reflector as well as manufacturing method of LED chip
  • LED (light-emitting diode) chip with reflector as well as manufacturing method of LED chip

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Experimental program
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Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0037] see figure 1 , figure 1 It is a flow chart of a method for manufacturing an LED chip with a reflector in the present invention, wherein the method for manufacturing an LED chip with a reflector includes the following steps:

[0038] S1: providing a light-emitting structure;

[0039] see Figure 2a , provide a light-emitting structure, the light-emitting structure includes a substrate 10, an epitaxial layer, a current blocking layer 30 and a transparent conductive layer 40, and the epitaxial layer includes a first semiconductor layer 21, an active layer sequentially arranged on the surface of the substrate 10 layer 22 and the second semiconductor layer 23 , the current blocking layer 30 is disposed on the second semiconductor layer 23 , and the transparen...

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PUM

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Abstract

The invention discloses a manufacturing method of an LED (light-emitting diode) chip with a reflector. A metal reflecting layer and a DBR reflecting layer are formed on the back side of a substrate sequentially, and light emitted by the chip from the back side is reflected to the front side of the chip to be emitted, so that the light output efficiency of the chip is improved. In addition, one metal reflecting layer is arranged between the back side of the substrate and the DBR reflecting layer, so that the problem of poor lateral reflection effect of the DBR reflecting layer is avoided and the reflection brightness is greatly improved; furthermore, the metal reflecting layer is protected by a dielectric film of the DBR reflecting layer, so that ageing of the reflecting layer in the metalreflecting layer is avoided.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to an LED chip with a reflector and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor device that uses carrier recombination to release energy to form light. LED chips have low power consumption, pure chromaticity, long life, small size, fast response time, energy saving and environmental protection, etc. Many advantages. [0003] The light of the existing front-mounted LED chips is mainly emitted from the front and back of the chip, and the light emitted from the back of the chip is absorbed and refracted by the chip, and finally it is difficult to emit from the front of the chip. Therefore, technicians solve the above-mentioned problems by disposing a support with high reflectivity on the backside of the chip. However, the existing support has low reflectivity and is prone to aging, whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/10H01L33/14H01L33/00
CPCH01L33/005H01L33/10H01L33/14
Inventor 王兵
Owner FOSHAN NATIONSTAR SEMICON
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