Resist Stripper

A technology of stripping liquid and resist, which is applied in the direction of electrical components, photosensitive material processing, circuits, etc., can solve the problems of weak chelation, weak resist stripping force, etc., and achieve the effect of excellent bath life

Active Publication Date: 2019-05-28
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the alkalinity and nucleophilicity are also weak as well as the chelating action, and there is a disadvantage that the resist stripping force is weak compared with resist stripping solutions using alkanolamines of primary or secondary amines.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] As the amines, N-methylethanolamine which is a secondary amine is used.

[0081] N-methylethanolamine (MMA) 20.0% by mass

[0082] Polar solvents are a combination of water, diethylene glycol monoethyl ether, and propylene glycol.

[0083] Diethylene glycol monoethyl ether (EDG) 49.5% by mass

[0084] Propylene glycol (PG) 10.0% by mass

[0085] Water 20.0% by mass

[0086] Hydrazine as a reducing agent is used as an additive.

[0087] Hydrazine monohydrate (HN·H 2 O) 0.5% by mass

[0088]The above components were mixed and stirred to prepare the sample resist stripping solution of Example 1.

[0089] In addition, 0.5 mass % of hydrazine monohydrate corresponds to 0.32 mass % of hydrazine. The amount of 0.18% by mass of the hydrazine monohydrate residue is water. Therefore, the above-mentioned compositional ratio of water can be said to be 20.18% by mass when the amount charged in the form of hydrazine monohydrate is also included. In all of the following Examp...

Embodiment 2

[0091] As the amines, N-ethylethanolamine, which is a secondary amine, was used.

[0092] N-ethylethanolamine (EEA) 20.0% by mass

[0093] Polar solvents are a mixture of water, diethylene glycol monoethyl ether, and propylene glycol.

[0094] Diethylene glycol monoethyl ether (EDG) 49.5% by mass

[0095] Propylene glycol (PG) 10.0% by mass

[0096] Water 20.0% by mass

[0097] Hydrazine is used as reducing agent.

[0098] Hydrazine monohydrate (HN·H 2 O) 0.5% by mass

[0099] The above components were mixed and stirred to prepare a sample resist stripping solution of Example 2.

[0100] Example 2 is a composition in which N-methylethanolamine (MMA) in Example 1 is changed to N-ethylethanolamine (EEA). In addition, 0.5 mass % of hydrazine monohydrate corresponds to 0.32 mass % of hydrazine. The amount of 0.18% by mass of the hydrazine monohydrate residue is water. Therefore, the above-mentioned compositional ratio of water can be said to be 20.18% by mass when the amo...

Embodiment 3

[0102] As the amines, primary amine monoethanolamine was used.

[0103] Monoethanolamine (MEA) 20.0% by mass

[0104] Polar solvents are a mixture of water, diethylene glycol monoethyl ether, and propylene glycol.

[0105] Diethylene glycol monoethyl ether (EDG) 49.5% by mass

[0106] Propylene glycol (PG) 10.0% by mass

[0107] Water 20.0% by mass

[0108] Hydrazine is used as reducing agent.

[0109] Hydrazine monohydrate (HN·H 2 O) 0.5% by mass

[0110] The above components were mixed and stirred to prepare a sample resist stripping solution of Example 3.

[0111] Example 3 is a composition in which N-methylethanolamine (MMA) in Example 1 is changed to monoethanolamine (MEA). In addition, 0.5 mass % of hydrazine monohydrate corresponds to 0.32 mass % of hydrazine. The amount of 0.18% by mass of the hydrazine monohydrate residue is water. Therefore, the above-mentioned compositional ratio of water can be said to be 20.18% by mass when the amount charged in the form ...

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Abstract

In processes for manufacturing semiconductor devices, etc., curing is performed at a temperature higher than in conventional practice to avoid defective curing of resists. A removal solution having a removing power greater than in conventional practice is therefore required. A resist removal solution containing a primary and / or secondary amine as an amine, containing a diethylene glycol monoethyl ether (EDG), a propylene glycol (PG), and water as a polar solvent, and containing hydrazine as an additive, the amine being more than 3.0 mass% and no more than 20.0 mass%, the diethylene glycol monoethyl ether being more than 39.5 mass% and no more than 59.5 mass%, the water being more than 5.18 mass% and less than 28.18 mass%, and the hydrazine being more than 0.064 mass% and no more than 1.28 mass%, wherein the resist removal solution can remove a resist film that was baked at high temperatures, does not cause corrosion at a metal film surface and cross section, and exhibits superior regeneration efficiency when reused.

Description

technical field [0001] The present invention relates to a stripping solution for stripping resist films used in the manufacture of display devices such as liquid crystals and organic ELs, and semiconductors. It can be said that the resist stripping liquid does not substantially corrode the aluminum film and the copper film. Background technique [0002] Flat panel displays (FPDs) such as liquid crystals and organic EL (Electro-Luminescence) require large screens. On the other hand, small and high-definition screens are required for notebook PCs, tablet PCs, and smartphones. For large-screen applications, thin film transistors (TFT: Thin Film Transistor) using Cu wiring or Cu / Mo laminated wiring (hereinafter simply referred to as "Cu wiring") are used. In addition, for small-sized high-definition screen applications, TFTs using Al wiring can be used. Hereinafter, Cu is also called copper, Mo is also called molybdenum, and Al is also called aluminum. [0003] Some panel ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
CPCG03F7/42H01L21/304
Inventor 鬼头佑典渊上真一郎
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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