Magnetoelectric coupling heterojunction structure based on amorphous smco and its preparation method and application
A magnetoelectric coupling and heterojunction technology, applied in the manufacture/processing of electromagnetic devices, material selection, vacuum evaporation plating, etc.
Active Publication Date: 2020-03-17
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology
Heterojunctions composed of PMN-PT and ferromagnetic materials have been extensively studied, but so far, there has been no report of an amorphous permanent magnetic material with planar anisotropy and a ferromagnetic A heterojunction composed of electrical materials, and electronic devices composed of these two materials are urgently needed in the field of modern microelectronics industry, and have very broad application prospects in the fields of multi-state memory, sensors, logic devices, etc.
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Embodiment 1
[0057] The composition of the SmCo target is: Sm 1-x co x (x=0.83),
[0058] Growth conditions: growth of amorphous SmCo film at 300K, thickness: 10nm
[0059] The composition of the heterojunction structure is: Cr(50nm) / a-SmCo(10nm) / PMN-PT(111).
Embodiment 2
[0061] The composition of the SmCo target is: Sm 1-x co x (x=0.83),
[0062] Growth conditions: growth of amorphous SmCo film at 300K, thickness: 50nm
[0063] The composition of the heterojunction structure is: Cr(50nm) / a-SmCo(50nm) / PMN-PT(011).
Embodiment 3
[0065] The composition of the SmCo target is: Sm 1-x co x (x=0.83),
[0066] Growth conditions: growth of amorphous SmCo film at 300K, thickness: 100nm
[0067] The composition of the heterojunction structure is: Cr(50nm) / a-SmCo(100nm) / PMN-PT(011).
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Abstract
The present invention provides a heterojunction structure with in-plane magnetic anisotropy and magnetoelectric coupling properties and its preparation method and application. The heterojunction structure sequentially includes: (011) oriented single crystal substrate, amorphous SmCo film layer and Cr covering layer. The in-plane anisotropic stress field provided by the (011)-oriented single crystal substrate can induce in-plane anisotropy in amorphous SmCo films. Wherein, when the substrate is PMN-PT, the heterojunction structure is specifically a magnetoelectric coupling heterojunction structure, and the magnetoelectric coupling heterojunction structure of the present invention is a brand-new amorphous permanent magnet SmCo alloy as a multiferroic complex heterojunction with ferromagnetic layers. Due to the good surface anisotropy and non-volatile anisotropic magnetic memory effect, the heterojunction is used in magnetic storage, magnetic recording, high-sensitivity magnetoelectric weak signal detectors, micro-permanent magnetic materials with adjustable magnetic energy product, There are potential applications in sensors, logic devices, and electromagnetic recording.
Description
technical field [0001] The invention relates to a magnetoelectrically coupled heterojunction structure based on amorphous SmCo and its preparation method and application, in particular to an amorphous SmCo thin film with surface anisotropy and non-volatile magnetic memory effect and its preparation method and application . Background technique [0002] Amorphous SmCo thin films have great application potential in information storage. Its high coercive force is crucial to the realization of high storage density, and the less grain boundaries in the amorphous state ensure a higher signal-to-noise ratio. At the same time, the smooth film surface makes contact magnetic recording possible. In addition, the amorphous SmCo film with planar anisotropy makes the development of magnetic recording more rapid. The domain structure, magnetic anisotropy, and magnetostrictive properties of amorphous SmCo thin films have been extensively studied. But so far, the plane anisotropy of amorph...
Claims
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IPC IPC(8): C23C14/16C23C14/34C23C14/35H01L43/10H01L43/12H10N50/01
CPCC23C14/165C23C14/3414C23C14/352H10N50/85H10N50/01
Inventor 梁文会胡凤霞熊杰夫李佳乔凯明刘瑶匡皓王晶孙继荣沈保根
Owner INST OF PHYSICS - CHINESE ACAD OF SCI