Magnetoelectric coupling heterojunction structure based on amorphous SmCo and preparing method and application of magnetoelectric coupling heterojunction structure

Abstract

The invention provides a heterojunction structure with the in-plane magnetic anisotropy and the magnetoelectric coupling property and a preparing method and application of the heterojunction structure. The heterojunction structure sequentially comprises a (011) oriented single-crystal substrate, an amorphous SmCo film layer and a Cr coverage layer. An in-plane anisotropy stress field provided by the (011) oriented single-crystal substrate can induce an amorphous SmCo film to generate the anisotropy. When the substrate is PMN-PT, the heterojunction structure is the magnetoelectric coupling heterojunction structure specifically. The magnetoelectric coupling heterojunction structure is a brand new multiferroic compound heterojunction with an amorphous permanent magnet SmCo alloy as a ferromagnetic layer. Due to combination of the good plane anisotropy and nonvalatile anisotropy magnetic memory effect, the heterojunction has potential application value in the aspects of magnetic storage, magnetic recording, a high-sensitivity magnetic electricity weak signal detector, a magnetic energy product adjustable mini-type permanent magnet material, a sensor, a logic device, electric control magnetic recording and the like.

Description

technical field [0001] The invention relates to a magnetoelectrically coupled heterojunction structure based on amorphous SmCo and its preparation method and application, in particular to an amorphous SmCo thin film with surface anisotropy and non-volatile magnetic memory effect and its preparation method and application . Background technique [0002] Amorphous SmCo thin films have great application potential in information storage. Its high coercive force is crucial to the realization of high storage density, and the less grain boundaries in the amorphous state ensure a higher signal-to-noise ratio. At the same time, the smooth film surface makes contact magnetic recording possible. In addition, the amorphous SmCo film with planar anisotropy makes the development of magnetic recording more rapid. The domain structure, magnetic anisotropy, and magnetostrictive properties of amorphous SmCo thin films have been extensively studied. But so far, the plane anisotropy of amorph...

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Problems solved by technology

Heterojunctions composed of PMN-PT and ferromagnetic materials have been extensively studied, but so far, there has been no report of an amorphous permanent magnetic material with planar anisotropy and a ferromagnetic A heterojunction composed of electrical materials, and electronic devices composed of these two materials are urgently needed in the field of modern microelectronics industry, and have very broad application prospects in the fields of multi-state memory, sensors, logic devices, etc.

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