Method of using titanium or titanium nitride particle control sheet in physical vapor deposition

Abstract

The invention relates to an application method of a titanium or titanium nitride particle control sheet in chemical vapor deposition. The method comprises the steps of A, providing a wafer used as thecontrol sheet; B, forming an oxide layer on a surface of the wafer; C, performing physical vapor deposition on the oxide layer so as to detect quality of titanium or titanium nitride particles; D, removing a titanium thin film or a titanium nitride thin film and a part of oxide layer by employing a tungsten chemical and mechanical grinding mode after detection is completed, wherein the thicknessof the oxide layer which is grinded and removed does not exceed the thickness of the grown oxide layer; E, repeating the step C and the step D by the grinded wafer in next detection; and F, repeatedlyexecuting the step B until the step E when the oxide layer detected for many times is completely consumed. By the method, the control sheet recycling rate is higher, the frequency of repeatedly usingthe control sheet can be higher, and the application cost of the control sheet is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for using titanium or titanium nitride particle control sheets in physical vapor deposition. Background technique [0002] Control wafers are wafers used to monitor the production process. The manufacturing process of semiconductor equipment may drift more or less over time. For example, it is designed to grow an oxide layer with a thickness of 3000 angstroms. The same equipment and the same process can only grow 2500 angstroms after a period of time. If the drift occurs during product production, the product wafer needs to be extended by 500 Angstroms. In addition to the increase in cost, time is also lost. And there are some processes, such as etching, which cause the product to be scrapped because it cannot be remedied. [0003] Therefore, the control chip is used to go through the process first, and after the indicators meet the design requireme...

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Problems solved by technology

[0006] This method will cause the surface of the control wafer to be rough due to corrosion, making it inconvenient to use the control wafer again, and the recovery rate of the control wafer is low

In addition, since the silicon dioxide layer is completely peeled off each time, the thickness of the control sheet is reduced very quickly, and a control sheet can only be reused for about 10 times at most, resulting in high cost of use of the control sheet

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