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Ceramic/aluminum joint body, insulated circuit board, power module, LED module, and thermoelectric module

A technology for circuit substrates and ceramic substrates, applied in the direction of circuit substrate materials, circuits, printed circuits, etc., can solve the problems of insufficient joint strength and reduced joint reliability, and achieve the effect of improving joint strength and joint reliability

Active Publication Date: 2018-07-17
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In the above-mentioned insulated circuit board (substrate for power module), an example was shown in which Al-Si-based brazing filler metal was used when bonding the ceramic substrate and the aluminum plate. 3 N 4 ) and the aluminum plate, the joint strength cannot be ensured sufficiently due to the influence of the sintering aid of the ceramic substrate, etc.
[0010] In particular, there are ceramic substrates (insulating layers) and metal layers in insulating circuit boards (substrates for power modules) that undergo repeated cooling and heating cycles between a high-temperature state caused by heat generated during operation of power semiconductor elements and a low-temperature state when they are not operating. The problem that the joint reliability is easy to decrease

Method used

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  • Ceramic/aluminum joint body, insulated circuit board, power module, LED module, and thermoelectric module
  • Ceramic/aluminum joint body, insulated circuit board, power module, LED module, and thermoelectric module
  • Ceramic/aluminum joint body, insulated circuit board, power module, LED module, and thermoelectric module

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Experimental program
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Effect test

no. 1 approach

[0039] figure 1 It is a sectional view showing the ceramic-aluminum bonded body and the insulating circuit board of the first embodiment.

[0040] The ceramic-aluminum bonded body of the present embodiment is an insulated circuit including a ceramic substrate 11 as a ceramic member, a circuit layer 12 as an aluminum member bonded to an aluminum plate, and a metal layer 13 as an aluminum member bonded to an aluminum plate. Substrate 10.

[0041] Furthermore, the power module 30 of the present embodiment is formed by mounting a semiconductor element 24 such as a power semiconductor element on the circuit layer 12 of the insulating circuit board 10 via the solder layer 23 .

[0042]In addition, in the present embodiment, the cooler 14 is formed on the surface of the metal layer 13 opposite to the ceramic substrate 11 , and the insulating circuit board 20 with a cooler is provided.

[0043] The ceramic substrate (ceramic part) 11 is made of Si, which is excellent in insulation a...

no. 2 approach

[0062] image 3 It is a cross-sectional view showing a ceramic-aluminum bonded body and an insulating circuit board according to a second embodiment.

[0063] In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and the detailed description is abbreviate|omitted.

[0064] The ceramic-aluminum bonded body of the present embodiment is provided with: 3 N 4 A ceramic substrate (ceramic component) 11 made of a material containing magnesium (Mg) in (silicon nitride), provided on one side of the ceramic substrate 11 (in image 3 The circuit layer (aluminum plate, aluminum component) 12 that is the upper surface) and the other surface that is bonded to the ceramic substrate 11 (in image 3 Insulated circuit substrate (substrate for power module) 10 of metal layer (aluminum plate, aluminum member) 13 which is the lower surface).

[0065] Furthermore, the power module 30 of the present embodiment is formed by mounting a semiconductor eleme...

Embodiment 1

[0108] First, a silicon nitride substrate (40 mm×40 mm×thickness 0.32 mm) was produced by the method described in the above-mentioned embodiment so that the Mg concentration on the surface of the silicon nitride substrate became the concentration described in Table 1. In addition, the Mg concentration was determined by surface EPMA (electron probe microanalyzer) analysis. In addition, EPMA analysis was performed at 10 points (spot analysis) using FE-EPMA JXA-8530F manufactured by JEOL Ltd. under the conditions of an accelerating voltage of 15 kV and a beam current of 50 nA, and the average value thereof was regarded as the Mg concentration.

[0109] And, the Al plate ( 37mm×37mm×thickness 0.6mm), and an Al plate (37mm×37mm×thickness 1.6mm) composed of an Al plate material described in Table 1 to be a metal layer was laminated on the other surface. And, apply 5kgf / cm to them along the lamination direction 2 By heating while applying pressure, the Al plate and the ceramic subs...

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Abstract

The joint body according to the present invention pertains to a ceramic / aluminum joint body in which a ceramic member and an aluminum member comprising aluminum or an aluminum alloy are joined together. The ceramic member is configured by a silicon nitride that includes magnesium, and at a jointing interface of the ceramic member and the aluminum member, a jointing layer is formed in which magnesium is included in compounds of aluminum, silicon, oxygen, and nitride.

Description

technical field [0001] The present invention relates to a ceramic-aluminum bonded body and an insulating circuit substrate in which a ceramic component is bonded to an aluminum component made of aluminum or an aluminum alloy, and a power module, an LED module, and a thermoelectric module including the insulating circuit substrate. [0002] This application claims priority based on Patent Application No. 2015-231040 filed in Japan on November 26, 2015 and Patent Application No. 2016-178530 filed in Japan on September 13, 2016, and the contents thereof are used here. Background technique [0003] The power module, the LED module, and the thermoelectric module have a structure in which a power semiconductor element, an LED element, and a thermoelectric element are bonded to a circuit layer made of a conductive material. [0004] For example, power semiconductor elements for large-power control used to control wind power generation, electric vehicles, hybrid vehicles, etc., gene...

Claims

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Application Information

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IPC IPC(8): H01L23/13C04B37/02H01L23/12H01L23/373H01L23/40
CPCC04B2235/96C04B2237/121C04B2237/128C04B2237/368C04B2237/402C04B2237/52C04B2237/704C04B2237/706C04B2237/708C04B35/584C04B35/645C04B37/025C04B37/026C04B2235/3206C04B2237/08C04B2237/72B23K1/0016B23K2103/10B23K2103/172B23K2103/52B23K35/286B23K35/0233B23K35/025C22C21/00C22C21/02C04B2237/60H01L23/3735H01L2224/32225H01L23/14H01L23/40C04B37/02H01L23/13H05K1/0306H05K1/05H01L23/12C22C29/16
Inventor 寺崎伸幸长友义幸
Owner MITSUBISHI MATERIALS CORP
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