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A dry etching pretreatment method and copper pillar bumps prepared by the method

A pretreatment and dry engraving technology, used in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as high cost and long copper oxide cycle, and achieve zero damage, low cost, and wide range. The effect of the application foreground

Active Publication Date: 2020-06-09
SJ SEMICON JIANGYIN CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a dry etching pretreatment method for solving the problems of long cycle and high cost of forming copper oxide in the prior art

Method used

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  • A dry etching pretreatment method and copper pillar bumps prepared by the method
  • A dry etching pretreatment method and copper pillar bumps prepared by the method
  • A dry etching pretreatment method and copper pillar bumps prepared by the method

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Embodiment 1

[0044] see figure 1 , the present invention provides a dry etching pretreatment method, comprising the following steps:

[0045] S1. Provide a chip with copper pillars, and there is a solder layer above the copper pillars;

[0046] S2, placing the chip in a vacuum reaction chamber, and performing dry etching pretreatment with an oxidizing gas, so that copper oxide is formed on the outer surface of the copper pillar;

[0047] S3. Reflowing the solder layer at high temperature to form solder bumps.

[0048] In the method of the present invention, before high-temperature reflow, a step of dry engraving pretreatment process is added to oxidize the side wall of the copper pillar, so as to prevent solder bumps from flowing after high-temperature reflow, and improve the reliability and stability of the chip.

[0049] As an example, the oxidizing gas is oxygen. Of course, it can also be other gases that can oxidize copper without affecting the process.

[0050] As an example, in t...

Embodiment 2

[0056] In this embodiment, the intervention method provided by the present invention includes the following steps:

[0057] (1) providing a chip with copper pillars, and there is a solder layer above the copper pillars;

[0058] (2) placing the chip in a vacuum reaction chamber, and performing dry etching pretreatment with an oxidizing gas mixed with an inert gas, so that copper oxide is formed on the outer surface of the copper pillar;

[0059] (3) reflowing the solder layer at high temperature to form solder bumps.

[0060] As an example, in the step (2), the inert gas is argon, that is, the mixed gas is argon and oxygen, oxygen is used for the copper oxide column, and argon will not affect the process, that is, copper The structure of each part of the stud bump will not undergo chemical reaction and zero etching.

[0061]It should be noted that the ratio of the argon and oxygen is arbitrary, and the flow rates of the argon and oxygen are not limited during the dry-burning...

Embodiment 3

[0064] The difference between this embodiment and embodiment 2 is that in the step (2) of the dry etching pretreatment method, the inert gas is preferably nitrogen, that is, the mixed gas is nitrogen and oxygen. The ratio of the nitrogen and oxygen is arbitrary, and during the dry-burning pretreatment process, the flow rates of the nitrogen and oxygen are the same or different.

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Abstract

The invention provides a dry etching preprocessing method. The method comprises the following steps that 1) a chip with a copper column is provided, and a solder layer is arranged over the copper column; 2) a chip is placed in a vacuum reaction chamber, and dry etching preprocessing via oxidizing gas or oxidizing gas mixed inert gas is carried out, so that copper oxide is formed in the external surface of the copper column; and 3) the solder layer is back-flowed at high temperature to form solder salient points. According to the method of the invention, a dry etching preprocessing step via oxidizing gas is implemented before high-temperature backflow so that the sidewall of the copper column is oxidized, the solder layer is avoided from a flowing phenomenon after high-temperature backflow,the etching amount of a protection layer is zero, the chip reliability and stability are improved, and the dry etching preprocessing method is low in cost, high in efficiency and free of damage, andovercomes disadvantages in the prior art effectively.

Description

technical field [0001] The invention relates to a chip packaging process in a semiconductor manufacturing process, in particular to a dry etching pretreatment method and a copper pillar bump prepared by the method. Background technique [0002] With the continuous development of integrated circuit technology, electronic products are increasingly developing in the direction of miniaturization, intelligence, high performance and high reliability. The integrated circuit packaging not only directly affects the performance of integrated circuits, electronic modules and even the whole machine, but also restricts the miniaturization, low cost and reliability of the entire electronic system. With the gradual reduction of the size of the integrated circuit chip and the continuous improvement of the integration level, the electronic industry has put forward higher and higher requirements for the integrated circuit packaging technology. [0003] Copper pillar bump is a new generation ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/488H01L21/60
CPCH01L24/11H01L24/13H01L2224/1182H01L2224/11849H01L2224/11
Inventor 葛飞吴欣华
Owner SJ SEMICON JIANGYIN CORP