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Novel homojunction PIN ultraviolet detector

An ultraviolet detector and homojunction technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing dark current, interface polarization, sacrificing short-wave responsivity, etc., to improve spectral responsivity, improve The effect of collection efficiency

Active Publication Date: 2018-07-20
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, reducing the thickness of the P-type gradient doped layer will increase the difficulty of preparing ohmic electrodes and increase the dark current, and the use of heteroepitaxial technology will bring about interface polarization problems and sacrifice short-wave responsivity.

Method used

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  • Novel homojunction PIN ultraviolet detector
  • Novel homojunction PIN ultraviolet detector
  • Novel homojunction PIN ultraviolet detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Such as figure 1 As shown, a new type of homojunction PIN ultraviolet detector, including substrate 1, buffer layer 2, N-type ohmic contact layer 3, absorption layer 4, P-type gradient doping layer 5, N-type ohmic contact electrode 6, P type ohmic contact electrode 7; the buffer layer 2 is arranged on the substrate 1, and the buffer layer 2 is a low-temperature epitaxial AlN material; the N-type ohmic contact layer 3 is arranged on the buffer layer 2, and the N-type ohmic contact layer 3 is a high electron concentration of N-type GaN material; the absorption layer 4 and the N-type ohmic contact electrode 6 are all arranged on the N-type ohmic contact layer 3, the N-type ohmic contact electrode 6 is ring-shaped, and the absorption layer 4 is located on the N-type ohmic contact electrode 6 In the ring, the absorption layer 4 is an unintentionally doped weak N-type GaN material; the P-type gradient doping layer 5 is arranged on the absorption layer 4, and the P-type gradie...

Embodiment 2

[0032] The difference between this embodiment and Embodiment 1 is:

[0033] The buffer layer 2 is a low temperature epitaxial AlN material with a thickness of 200nm.

[0034] The thickness of the N-type ohmic contact layer 3 is 400nm, which is N-type Al with high electron concentration 0.17 Ga 0.83 N material, doping concentration greater than 1×10 18 cm -3 .

[0035] The thickness of the absorbing layer 4 is 400nm, which is unintentionally doped weak N-type Al 0.17 Ga 0.83 N material with a free electron concentration of 1×10 16 cm -3 .

[0036] The P-type gradient doped layer 5 has a thickness of 70nm and is P-type Al 0.17 Ga 0.83 N material.

Embodiment 3

[0038] The difference between this embodiment and embodiment one and two is:

[0039]The buffer layer 2 is a low temperature epitaxial AlN material with a thickness of 300nm.

[0040] The thickness of the N-type ohmic contact layer 3 is 500nm, which is N-type Al with high electron concentration 0.3 Ga 0.7 N material, doping concentration greater than 1×10 18 cm -3 .

[0041] The thickness of the absorbing layer 4 is 500nm, which is unintentionally doped weak N-type Al 0.3 Ga 0.7 N material with a free electron concentration of 1×10 16 cm -3 .

[0042] The P-type gradient doped layer 5 has a thickness of 70nm and is P-type Al 0.3 Ga 0.7 N material.

[0043] The reason for the high responsivity of the detector of the present invention is that when the ultraviolet light is incident from the P-type gradient doped layer 5, due to the Al x Ga 1-x The N material has a large absorption coefficient, and a large amount of ultraviolet rays will be absorbed in the P-type grad...

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Abstract

The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a novel homojunction PIN ultraviolet detector comprising a substrate, a buffer layer, an N type ohmic contact layer, an absorption layer, a P type gradient doping layer, an N type ohmic contact electrode, and a P type ohmic contact electrode. The buffer layer is arranged on the substrate; the N type ohmic contact layer is arranged on the buffer layer; the absorption layer and the N type ohmic contact electrode are arranged on the N type ohmic contact layer; the N type ohmic contact electrodehas an annular shape and the absorption layer is arranged in the ring of the N type ohmic contact electrode; the P type gradient doping layer is arranged on the absorption layer; and the P type ohmiccontact electrode is arranged on the P type gradient doping layer. The working mode of the detector is as follows: light enters from the front end. The novel homojunction PIN ultraviolet detector hasthe following advantages: the electric field distribution is adjusted by the P type gradient doping layer, so that the collection efficiency of photo-generated carriers of the P type gradient doping layer is improved and thus the spectral response rate of the detector is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a novel homojunction PIN ultraviolet detector. Background technique [0002] Ultraviolet detection technology has a wide range of applications in missile early warning, precision guidance, ultraviolet secure communication, biochemical analysis, open flame detection, biomedical analysis, offshore oil monitoring, ozone concentration monitoring, solar index monitoring and other fields. With the development of wide bandgap semiconductor technology, especially the maturity of III-V nitride material technology, it has brought opportunities for the development of all-solid-state ultraviolet detectors. The three- and five-group nitride material GaN can form a composition-adjustable ternary alloy AlGaN with AlN, which belongs to the direct band gap semiconductor. The band gap of the semiconductor material can be changed by adjusting the aluminum composition of...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/105
Inventor 王俊郭进何来胜胡洋王国胜
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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