Tunneling field effect transistor and manufacturing method thereof

Abstract

The present invention provides a tunneling field effect transistor and a manufacturing method thereof. A formed source region is located below part of a gate structure and in a substrate of the side of the gate structure, that is to say, the gate structure alternately covers part of the source region, so that the potential control capacity of a gate voltage on a device source region/channel regionis improved, further, the area of the source region is larger than the area of a drain region, the dosage concentration of the source region is higher than the dosage concentration of the drain region to allow the carrier concentration of the source region to be higher than the carrier concentration of the drain region as a whole, the finally formed gate electrode with a ferroelectric gate layerhas a negative capacitance effect to amplify the gate electrode surface potential, and therefore, the tunneling probability of a device can be increased, and an ON state current of the device can be integrally improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices and its manufacture, in particular to a tunneling field effect transistor and its manufacturing method. Background technique [0002] With the continuous development of integrated circuit technology, the size of devices continues to shrink, resulting in more and more problems such as short channel effects and leakage currents of devices, resulting in increasing power consumption of circuits. For traditional metal oxide field effect transistor (MOSFET) devices, limited by the carrier diffusion mechanism, the subthreshold swing (SS) of MOSFET devices cannot exceed 60mV / dec at room temperature, which seriously affects the corresponding The switching rate at the gate voltage causes the leakage current to increase exponentially with decreasing supply voltage. [0003] Tunneling Field Effect Transistor (TFET, Tunneling Field Effect Transistor), its working principle is band tunneling mechanism, fro...

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Problems solved by technology

However, due to the limitation of the tunneling probability, the traditional TFET tunneling current is small, which is difficult to meet the application requirements

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