Deep ultraviolet LED packaging structure and manufacturing method thereof

Abstract

The invention provides a deep ultraviolet LED packaging structure and a manufacturing method thereof. The packaging structure comprises a deep ultraviolet LED chip and a bracket, an antireflection layer, a light-transmitting insulating layer and a light-transmitting cover plate, wherein the bracket has a downward concave hollow cavity with an upward opening; the inner bottom wall of the hollow cavity comprises a first coating region attached with a first metal layer and a second coating region attached with a second metal layer; the first coating region and the second coating region are arranged at intervals with different electrical properties; the deep ultraviolet LED chip stretches across between the first metal layer and the second metal layer; the antireflection layer is attached to the surface of the deep ultraviolet LED chip; the light-transmitting insulating layer is attached to regions, not in contact with the deep ultraviolet LED chip, on the outer surfaces of the first metallayer and the second metal layer; and the light-transmitting cover plate covers the opening of the bracket. By virtue of the deep ultraviolet LED packaging structure, occurrence of oxidization and corrosion phenomena of the metal material caused by exposure at a high temperature can be reduced; and in addition, a total reflection phenomenon of the LED chip light emitting surface caused by high material interface refractive index difference can be relieved.

Description

technical field [0001] The invention relates to LED packaging technology, in particular to a deep ultraviolet LED packaging structure and a manufacturing method thereof, belonging to the technical field of semiconductor device manufacturing. Background technique [0002] Ultraviolet light can usually be divided into: UVA (320-400nm), UVB (280-320nm), UVC (200-280nm) and vacuum ultraviolet VUV (10-200nm) according to the wavelength band. [0003] Ultraviolet light-emitting diodes (UV LEDs) based on III-nitride materials have broad application prospects in the fields of sterilization, polymer curing, biochemical detection, non-line-of-sight communication, and special lighting. Compared with the traditional ultraviolet light source mercury lamp, it has many advantages such as environmental protection, small and portable, low power consumption and low voltage. In recent years, it has received more and more attention and attention. [0004] As we all know, ultraviolet light has...

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Problems solved by technology

[0006] The present invention provides a deep ultraviolet LED packaging structure and its manufacturing method, aiming to improve and solve the serious total reflection phenomenon caused by many material interfaces and large material refractive index differences under the existing packaging structure, and at the same time solve the problem of the exposed metal coating in the packaging bracket. As a result, it is easy to deteriorate at high temperature, and the electrical conductivity, thermal conductivity and reflection performance are reduced, which affects the reliability and life of the packaged device.

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