Monocrystal silicon crucible

A single crystal silicon and crucible technology, applied in the field of semiconductor and solar crystal growth equipment, can solve the problems of poor radial thermal conductivity, high oxygen content of single crystal silicon, affecting electrical properties, etc. Improve the effect of heat transfer

Inactive Publication Date: 2018-08-14
周俭
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Although the above-mentioned prior art provides a crucible using a combination of carbon materials, since the carbon material is a carbon fiber reinforced carbon matrix composite material composed of pure carbon elements, its molding is formed by laminating a carbon fiber net tire and a carbon cloth into a prefabricated However, its radial thermal conductivity is poor, and there are problems such as excessive energy consumption and high oxygen content in the obtained single crystal silicon, which in turn affects its electrical properties.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monocrystal silicon crucible
  • Monocrystal silicon crucible

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Such as figure 1 with figure 2 As shown, a Czochralski monocrystalline silicon crucible described in this embodiment includes a crucible part 1 body configured to hold a quartz crucible; the crucible part 1 includes a hole unit 4 arranged on the side wall of the crucible part 1 body , communicates with the inner and outer spaces of the crucible part 1; the proportion of the hole unit 4 in the circumferential direction of the second crucible unit 3 gradually increases from one side to the other side of the bottom of the crucible part 1, because in the process of refining single crystal silicon , through the setting of the hole unit 4 to better control the transfer of heat, control the temperature distribution of the molten liquid up and down, and at the same time save more energy in the process of growing the crystal, by setting the hole on the side wall of the crucible part 1 The unit 4 increases the gas permeability of the crucible part 1. During the heating process,...

Embodiment 2

[0044] Such as figure 1 with figure 2 As shown, this embodiment is a further limitation of the first embodiment above. A single crystal silicon crucible described in this embodiment, the material of the crucible part 1 is set as a carbon-carbon composite material, due to the particularity of the carbon-carbon composite material , its structure is interwoven distribution, and its heat transfer effect is poor. Therefore, a number of hole units 4 are arranged on its surface to increase the air permeability and light transmittance of the crucible part 1. During the heating process, heat is transferred from the hole units 4 In the hot crucible part 1, the transfer of heat is increased, and the distribution of the hole units 4 is arranged on the side wall of the crucible part 1, which facilitates the convection control inside the crucible part 1 during the heating process, thereby reducing the temperature of the single crystal silicon oxygen content.

[0045] In addition, due to ...

Embodiment 3

[0047] Such as figure 1 with figure 2 As shown, this embodiment is a further limitation of the first embodiment above. A single crystal silicon crucible described in this embodiment includes a crucible part 1 body configured to hold a quartz crucible; the crucible part 1 includes a first crucible The unit 2 is configured as the bottom of the crucible part 1 and is surrounded by at least two petals. The center of the first crucible unit 2 is provided with a through hole 5; the second crucible unit 3 is connected with the first crucible unit 2 to form a crucible The side wall of the part 1; the hole unit 4 is arranged on the second crucible unit 3 and communicates with the inner and outer spaces of the crucible part 1; the area of ​​the crucible part 1 that contacts the external space through the hole unit 4 is from one side of the bottom of the crucible part 1 to the other gradually increase on one side.

[0048] In the present invention, the crucible is arranged in a two-st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
densityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a monocrystal silicon crucible. The monocrystal silicon crucible comprises a crucible part body which is configured to store a quartz crucible, wherein a crucible part comprises hole units; the hole units are arranged on a side wall of the crucible part body and are used for communicating inner and outer spaces of the crucible part; the ratio of the hole units on a second crucible unit in the peripheral direction is gradually increased from one side of the bottom of the crucible part to the other side; the crucible part is made of a carbon-carbon composite material. According to the monocrystal silicon crucible, the carbon-carbon composite material is used as the side wall of the crucible, the thickness of the side wall is reduced, the capacity of the crucible is enlarged and the yield of monocrystal silicon is improved; the hole units are arranged on the side wall so that the heat transferring of a heating body of a heater on the quartz crucible and a silicon melt is improved; the hole units with different sizes, different shapes or different distribution densities are arranged on the side wall, so that the distribution of a temperature gradient in the silicon melt can be effectively reduced; the convection of the silicon melt is controlled so that the oxygen content of the monocrystal silicon is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor and solar crystal growth equipment, and in particular relates to a single crystal silicon crucible. Background technique [0002] Monocrystalline silicon is a semiconductor material, which is commonly used to manufacture integrated circuits and other electronic components. After entering the 21st century, in response to increasingly serious environmental problems, the demand for clean energy has promoted the development of the photovoltaic market. Crystalline silicon solar cells It is the leading product in the photovoltaic industry, accounting for 90% of the market share. Driven by the Chinese market, my country's solar photovoltaic power generation industry has developed rapidly, and my country's annual output of solar cells has grown from 1% of the world's share to more than 70% of the world's share. Compared with other crystalline silicon solar cells, monocrystalline silicon solar cells...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/10C30B29/06
CPCC30B15/10C30B29/06
Inventor 周俭
Owner 周俭
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products