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Method for separating heavy metals in trichlorosilane

A technology of trichlorosilane and heavy metals, applied in the direction of non-metallic elements, chemical instruments and methods, halosilane, etc., can solve the problems of high safety risk, difficult process, amplification, etc., and achieve high removal efficiency and efficient adsorption effect

Inactive Publication Date: 2018-08-17
XIAN LANSHEN NEW MATERIAL TECHNOLOGY CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is because, on the one hand, it is difficult for researchers to find very suitable adsorption materials in the laboratory research stage. On the other hand, due to the particularity of trichlorosilane, there is a greater safety risk in the adsorption method. The results are difficult to be effectively applied on an industrial scale, especially the process in the laboratory is difficult to scale up to an industrial scale efficiently and safely

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  • Method for separating heavy metals in trichlorosilane
  • Method for separating heavy metals in trichlorosilane
  • Method for separating heavy metals in trichlorosilane

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example 1

[0055] The separation method of heavy metals in trichlorosilane provided by the present invention has been technically demonstrated in a company in the electronic grade polysilicon industry and has been applied industrially. The factory area used in the test produces trichlorosilane. The ion removal rate is as high as 99.8%, and the treatment effect exceeds the expected effect in the factory. At present, a set of 50 tons / hour industrial equipment is in stable operation, and the effect of adsorption and separation of heavy metal ions is stable, safe and reliable.

example 2

[0057] The separation method of heavy metals in trichlorosilane has been technically demonstrated in a company in the solar-grade polysilicon industry and has been applied industrially. The factory area used in the test produces trichlorosilane. The removal rate of heavy metals reaches 99.5%, and the treatment effect meets the technical requirements of the factory area. At present, a set of 100 tons / hour industrial equipment has been put into operation in September 2017. The effect of adsorption and separation of heavy metal ions is stable and brings considerable economic benefits to the factory area. Labor intensity of workers. This method for separation of heavy metal ions in trichlorosilane has good effect, the system occupies a small area, is simple to operate, reliable in operation, convenient in maintenance, operates continuously for 24 hours, and greatly improves production efficiency. .

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Abstract

The invention provides a method for separating heavy metals in trichlorosilane. The method comprises the following steps of (1) pressurizing and cooling the to-be-treated trichlorosilane, wherein thepressure of trichlorosilane is 1.2MPa, and the temperature is lower than 50 DEG C; (2) enabling the pressurized and cooled trichlorosilane to pass through a resin adsorption tower at the pressure of 1.2MPa and the temperature being lower than 50 DEG C, and filling amino carboxylate chelating resin into the resin adsorption tower, so as to obtain trichlorosilane with separated heavy metal. The method has the advantages that the removal rate of heavy metal is high and is better than the removal rate of the existing distilling method; the safety and reliability are realized, the quality control and safety control have been verified on two industrial projects, and the method is suitable for industrialized scale application.

Description

technical field [0001] The invention belongs to the technical field of polysilicon, in particular to a method for separating heavy metals from trichlorosilane. Background technique [0002] Polysilicon is the most important and basic functional material in the semiconductor industry, electronic information industry, and solar photovoltaic cell industry. The production of polysilicon solar cells requires polysilicon materials, and the production of silicon single crystals for integrated circuits also requires polysilicon. According to different purity requirements, it is divided into electronic grade and solar grade. Among them, electronic-grade polysilicon accounts for about 55%, and solar-grade polysilicon accounts for 45%. With the rapid development of the photovoltaic industry, the growth rate of polysilicon demand for solar cells is higher than that of semiconductor polysilicon. At present, the demand for solar polysilicon Has exceeded electronic grade polysilicon. And...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
CPCC01B33/10784
Inventor 李冠婓白佳佳冯志军孙冰杰
Owner XIAN LANSHEN NEW MATERIAL TECHNOLOGY CO LTD
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