A method for establishing multiphysics coupled large-signal model of gan HEMT device

A model-building, large-signal technology, applied in instrumentation, electrical digital data processing, special data processing applications, etc., can solve the problems of low model accuracy and incomplete description of multi-physics coupling effects, and achieve the effect of improving accuracy
CN108416167BActive Publication Date: 2021-08-24CHENGDU HIWAFER SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
CHENGDU HIWAFER SEMICON CO LTD
Publication Date
2021-08-24

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Abstract

The invention discloses a method for establishing a GaN HEMT device multi-physics field coupled large-signal model, comprising the following steps: S1: respectively establishing the mapping relationship between device thermal parameters, electrical parameters and stress parameters and device physical parameters; S2: based on the physical basis Signal model modeling theory, deriving the analytical expression of the kernel of the large signal model; S3: respectively embedding thermal-electrical coupling, thermal-mechanical coupling, and mechanical-electrical coupling into the kernel of the large-signal model to obtain the modified kernel of the large-signal model ; S4: Bring the modified large-signal model kernel into the equivalent circuit topology of the model to form a complete electric-thermal-mechanical multiphysics coupled large-signal model. The invention introduces the influence of stress in the GaN epitaxial layer, thereby fully describing the electric-thermal-mechanical multi-physical field coupling effect of the device, improving the accuracy of the GaN HEMT device model, and the model can be used to guide new device design and process improvement.
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Description

technical field

[0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for establishing a GaN HEMT device multi-physical field coupling large signal model. Background technique

[0002] AlGaN / GaN high electron mobility transistor (GaN HEMT) has the advantages of very high two-dimensional electron gas (2DEG) concentration, high saturation electron migration velocity and high breakdown voltage, making GaN HEMT devices have GaAs devices in microwave power applications The incomparable advantages are the current research and application hotspots, and have been more and more widely used in communication, radar, electronic warfare and other fields.

[0003] Due to the low thermal conductivity of GaN itself, coupled with material characteristics and process limitations, it is difficult to directly adopt the homoepitaxial method (GaN substrate growth GaN epitaxy) to prepare microwave power devices with good performance ...

Claims

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