NH3 gas sensor based on PANI@Au-In2O3 sensitive material as well as preparation method and application of NH3 gas sensor

A gas sensor, au-in2o3 technology, applied in the direction of material resistance, material analysis, material analysis through electromagnetic means, etc., can solve the problems of energy consumption limitation, increase of working temperature, etc., with simple method, strong reliability and good application foreground effect

Active Publication Date: 2018-08-21
JILIN UNIV
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the biggest disadvantage of these materials is that the prepared sensors usually respond to ammonia at very high temperatures, and the high operating temperature greatly increases energy consumption and limits the practical application of the developed materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NH3 gas sensor based on PANI@Au-In2O3 sensitive material as well as preparation method and application of NH3 gas sensor
  • NH3 gas sensor based on PANI@Au-In2O3 sensitive material as well as preparation method and application of NH3 gas sensor
  • NH3 gas sensor based on PANI@Au-In2O3 sensitive material as well as preparation method and application of NH3 gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Preparation of In by hydrothermal method 2 O 3 Nano sensitive materials, with PANI@In 2 O 3 Nano sensitive materials make flat NH 3 Sensor, where In 2 O 3 The amount of addition is (In / Ani=2.5mol%), and the specific production process:

[0044] 1. Preparation of PET substrate: same as Comparative Example 1.

[0045] 2. Preparation of In 2 O 3 Nano sensitive material: add 1.5mmol InCl 3 ·4H 2 O was dissolved in 70mL deionized water, and 3mmol of citric acid and 20mmol of urea were added in sequence, and stirred continuously for 30min; the above solution was put into a 100mL hydrothermal kettle, and then put into a hydrothermal oven, the oven parameter was set to 130 ℃, 12h; after the reaction, the obtained product was cooled to room temperature, and then washed with water and ethanol alternately by centrifugation, and the obtained product was dried at 80°C.

[0046] After drying, the obtained product was sintered in a muffle furnace at 500°C for 3 hours at a heating rate of 2°C...

Embodiment 2

[0049] Preparation of In by hydrothermal method 2 O 3 Nano sensitive materials, with PANI@In 2 O 3 Nano sensitive materials make flat NH 3 Sensor, where In 2 O 3 The addition amount is (In / Ani=5mol%) and its specific production process:

[0050] PANI@In 2 O 3 As a nano-sensitive material (In / Ani=5mol%) to produce NH 3 Add 5mol% In during the in-situ polymerization of the sensor 2 O 3 Nanoporous material, the rest of the device manufacturing process is the same as in Example 1, and it is marked as sensor PAIn5.

Embodiment 3

[0052] Preparation of In by hydrothermal method 2 O 3 Nano sensitive materials, with PANI@In 2 O 3 Nano sensitive materials make flat NH 3 Sensor, where In 2 O 3 The addition amount of is (In / Ani=10mol%), and its specific production process:

[0053] PANI@In 2 O 3 As a nano-sensitive material (In / Ani=10mol%) to produce NH 3 Add 10mol% In during the in-situ polymerization of the sensor 2 O 3 The nanoporous material, the rest of the device manufacturing process is the same as in Example 1, and it is marked as sensor PAIn10.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Sensitivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a flexible plane type NH3 gas sensor based on a PANI@Au-In2O3 sensitive material, a preparation method of the NH3 gas sensor and application of the NH3 gas sensor to the aspect of detecting NH3 at room temperature and in the atmospheric environment, and belongs to the technical field of gas sensors. The sensor consists of a flexible PET substrate and the PANI@Au-In2O3 sensitive material which grows on the surface of the PET substrate in situ. The sensor developed by the invention has high sensitivity, also has low detection lower limit and can detect the NH3 of 500 ppb; the sensitivity on the NH3 of 100 ppm can reach to 46; and very high selectivity and repeatability are shown. The flexible bendable plane type structure sensor is simple in manufacturing process, small in size, safe and harmless, and has important application value.

Description

Technical field [0001] The invention belongs to the technical field of gas sensors, and specifically relates to a PANI@Au-In 2 O 3 Flexible Planar NH for Nano Sensitive Materials 3 Gas sensor, preparation method and detection of NH at room temperature in atmospheric environment 3 Aspect application. Background technique [0002] Ammonia (NH 3 ) Is a colorless gas with a pungent odor, which is strongly corrosive to the eyes and respiratory organs. According to the national standard "Occupational Exposure Limits for Hazardous Factors in the Workplace GBZ2-2002", the workshop NH 3 The maximum allowable concentration is 40ppm. Therefore, a low-cost NH with high sensitivity, low detection limit, detectable at room temperature, and 3 Gas sensors have important practical significance. [0003] In fact, in the past few years, around NH 3 Sensor research has been continuously deepening, and various types of NH have been developed 3 Sensors, such as traditional oxide semiconductor gas senso...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/126G01N27/127
Inventor 孙鹏李思琦刘方猛刁英杰田阗卢革宇高原粱喜双闫旭
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap