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Super-junction trench MOS structure semiconductor device

A MOS structure, super-junction trench technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting device reliability and other issues

Inactive Publication Date: 2018-08-21
朱江
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The gate electrode affects the reliability of the device due to the trench structure

Method used

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  • Super-junction trench MOS structure semiconductor device
  • Super-junction trench MOS structure semiconductor device
  • Super-junction trench MOS structure semiconductor device

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Experimental program
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Embodiment Construction

[0020] figure 1 It shows a schematic cross-sectional view of the cell of the first charge compensation MOS structure semiconductor device of the present invention, the substrate layer 1 is an N-type semiconductor silicon material, and is doped with a high concentration of phosphorus atoms; the drift layer 2 is located on the substrate layer 1 and is N type semiconductor silicon material; the body region 3, located on the drift layer 2, is a P-type semiconductor silicon material, and the surface of the body region 3 has a boron atom heavily doped contact region; the source region 4 is adjacent to the trench and the body region 3, It is an N-type semiconductor silicon material heavily doped with phosphorus atoms; silicon dioxide 5 is an oxide of silicon material and is located on the side wall of the trench; P-type semiconductor material 9 is a P-type semiconductor silicon material and is located in the lower part of the trench. A P-type high-concentration doped buffer layer is ...

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Abstract

The invention discloses a super-junction trench MOS structure semiconductor device which is a basic structure of a rectification device and a power MOSFET. The super-junction trench MOS structure semiconductor device is provided with an inversion region at the bottom of each trench or sets a semiconductor junction between a grid electrode and a drift layer, a peak electric field of a trench gate insulating layer is removed or a conductive path in extreme cases is formed, so that the reliability of the gate electrode of the device is improved. Meanwhile, a semiconductor material at the lower part of each trench is set to be a charge compensation region, so that the on-resistance is reduced.

Description

technical field [0001] The invention mainly relates to a semiconductor device with a superjunction trench MOS structure. The semiconductor device with a trench MOS structure of the invention is a gate-source interconnect rectifier device and a basic structure of a power MOSFET. Background technique [0002] Semiconductor devices with trench structures and super junction structures have become an important trend in device development. For power semiconductor devices, the requirements to continuously reduce on-resistance, increase current density and improve device reliability have become an important trend in device development. [0003] In traditional trench MOS devices, gate oxide is grown on the inner wall of the trench, and the trench is filled with polysilicon, and the semiconductor material on the side of the trench is sequentially provided with an active region, a body region and a drain region. The on-resistance of the device in the on-state is mainly affected by the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/423
CPCH01L29/78H01L29/0634H01L29/4236
Inventor 朱江
Owner 朱江
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