Epitaxial layer growth equipment and defect detection method during epitaxial layer growth

Abstract

The invention discloses epitaxial layer growth equipment and a defect detection method in the epitaxial layer growth process, and belongs to the technical field of semiconductors. The growth equipmentcomprises a reaction chamber and a detection device, the detection device comprises a light source module, an image obtaining module and a processing module; the light source module is used for providing ultraviolet light shining on a growing epitaxial layer; the image obtaining module is used for obtaining a to-be-detected image generated when the ultraviolet light shines on the epitaxial layerat the time when at least one growth stage is finished; the processing module is used for judging whether or not the epitaxial layer has defects during growing until the growth stage is finished according to the gray level of the to-be-detected image, by obtaining the to-be-detected image generated when the ultraviolet light shines on the epitaxial layer in the current growth stage, whether or notthe epitaxial layer has defects is judged according to the gray level of the to-be-detected image, when defects appear in the epitaxial layer growth, the defects formed in the epitaxial layer growthprocess can be fed back in time, operators can adjust the growth of the epitaxial layer in time, the internal defects of the epitaxial layer can be reduced conveniently, and the yield of epitaxial slices is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial layer growth device and a defect detection method in the epitaxial layer growth process. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) has the advantages of small size, long life, low power consumption, etc., and is currently widely used in automobile signal lights, traffic signal lights, display screens and lighting equipment. In the manufacturing process of LEDs, the most important thing is the production of epitaxial wafers. Epitaxial wafers include substrates and epitaxial layers grown on the substrates. The quality of epitaxial layers has a great impact on the quality of LEDs. [0003] In order to improve the quality of LEDs and reduce defective products, it is usually necessary to inspect the epitaxial layer after the epitaxial wafer is made, or to inspect a single LED chip after the LED chip is made to determine whether ...

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Problems solved by technology

[0004] Since the existing epitaxial layer detection can only be carried out after the epitaxial layer growth is completed, and the defects inside the epitaxial layer have been formed after the epitaxial layer growth is completed, the existing detection can only facilitate the removal of defective epitaxial wafers or LED chips cannot reduce defects inside the epitaxial layer and improve the yield of epitaxial wafers

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