A kind of Sn-containing intermediate microwave dielectric ceramic material and preparation method thereof

Abstract

The invention discloses a Sn-containing medium-dielectric constant microwave dielectric ceramic material and a preparation method thereof. The chemical formula of the Sn-containing medium-dielectric constant microwave dielectric ceramic material is CoSnNb2O8, and a microwave dielectric ceramic material with the chemical formula of (1-x)CoSnNb2O8-xZn1.01Nb2O6 is prepared from the above substance, wherein x is the mole fraction of Zn1.01Nb2O6, and x is not less than 0.40 and not more than 0.60. The preparation method comprises the following steps: batching, ball milling, pre-sintering synthesis,secondary ball milling, granulation, forming, debinding and sintering. The medium-dielectric constant and low-loss microwave dielectric ceramic material is prepared from specific raw materials through a specific technology, and the material has a low sintering temperature, has a resonant frequency temperature coefficient approaching zero, and can be widely applied to various dielectric resonators, filters and other devices.

Description

technical field [0001] The invention belongs to the technical field of electronic information materials, and in particular relates to a Sn-containing intermediary microwave dielectric ceramic material and a preparation method thereof. Background technique [0002] With the rapid development of communication technology, the number of mobile phones and communication base stations is increasing day by day, and the use of wireless communication to transmit data such as text, pictures and videos has developed rapidly. As the key material of components such as filters and resonators, microwave dielectric ceramics are the best dielectric materials rapidly developed under this background. It has three requirements when used: a suitable dielectric constant (ε r ), lower dielectric loss (or high quality factor Q×f) and resonant frequency temperature coefficient as close to zero as possible (|τ f |≤10ppm / ℃). However, there are very few single-phase microwave dielectric ceramics that ...

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Problems solved by technology

Although these materials have relatively ideal microwave dielectric properties, the sintering conditions are harsh and the preparation process is complicated. For example, Ba(Mg 1 / 3 Ta 2 / 3 )O 3 The sintering temperature is as high as 1640°C, and even dozens of hours of heat preservation are required to achieve densification. These are difficult to meet the development requirements of modern microwave communication devices for miniaturization and integration.

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