A gating device based on niobium oxide and its preparation method

A technology of gating devices and oxides, applied in the direction of electrical components, etc., can solve problems such as poor stability

Active Publication Date: 2020-05-15
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the threshold switch gating tube in the prior art has poor stability and cannot meet market demand.

Method used

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  • A gating device based on niobium oxide and its preparation method
  • A gating device based on niobium oxide and its preparation method
  • A gating device based on niobium oxide and its preparation method

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preparation example Construction

[0031] The present invention also provides a method for preparing a gate device based on niobium oxide described in the above technical solution, comprising the following steps:

[0032] (1) Using argon as the working gas and using the niobium pentoxide target as the sputtering target, the first sputtering is performed on the surface of the bottom electrode to obtain a semi-finished gate device based on niobium oxide;

[0033] (2) Argon is used as the working gas, and the platinum target is used as the sputtering target, and the second sputtering is carried out on the surface of the niobium oxide of the gate device semi-finished product based on the oxide of niobium to obtain the oxide based on niobium. gating device.

[0034] In the present invention, a platinum target and a niobium pentoxide target are preferably installed on the magnetron sputtering equipment, and then after the vacuum chamber of the magnetron sputtering equipment is evacuated, argon gas is introduced to th...

Embodiment 1

[0051] (1) will have an area of ​​1μm 2 The surface of the mold-loading base material of the TiN bottom electrode is washed by high-pressure air, and it is used for standby; the TiN bottom electrode is square and has a thickness of 200nm;

[0052] (2) Install a platinum target and a niobium pentoxide target in the magnetron sputtering equipment, place the mold carrier substrate with the TiN bottom electrode obtained in step (1) in the magnetron sputtering equipment, and place the vacuum chamber After evacuating, argon is introduced until the system pressure is 4 Torr;

[0053] (3) Turn on the radio frequency measurement and control sputtering power supply, and at a temperature of 300K, with a power of 120W, sputter niobium pentoxide to the surface of the TiN bottom electrode for 800s, then turn off the radio frequency magnetron sputtering to obtain a semi-finished product;

[0054] (4) Turn on the DC magnetron sputtering power supply, and at a temperature of 300K, with a powe...

Embodiment 2

[0059] (1) will have an area of ​​0.36μm 2 The surface of the mold-loading base material of the TiN bottom electrode is washed by high-pressure air, and it is used for standby; the TiN bottom electrode is square and has a thickness of 200nm;

[0060] (2) Install a platinum target and a niobium pentoxide target in the magnetron sputtering equipment, place the mold carrier substrate with the TiN bottom electrode obtained in step (1) in the magnetron sputtering equipment, and place the vacuum chamber After evacuating, argon is introduced until the system pressure is 4 Torr;

[0061] (3) Turn on the radio frequency measurement and control sputtering power supply, and at a temperature of 300K, with a power of 120W, sputter niobium pentoxide to the surface of the TiN bottom electrode for 800s, then turn off the radio frequency magnetron sputtering to obtain a semi-finished product;

[0062] (4) Turn on the DC magnetron sputtering power supply, and at a temperature of 300K, with a p...

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Abstract

The invention provides a gating device based on niobium oxide, which comprises a bottom electrode, a conversion layer and a top electrode from bottom to top, the bottom electrode is TiN or conductive glass, the conversion layer is niobium oxide, The top electrode is platinum. In the invention, niobium oxide is used as a conversion layer, TiN or conductive glass is used as a bottom electrode, and metal platinum is used as a top electrode to form a gating device based on niobium oxide with excellent electrical stability. Experimental results show that the gating device provided by the present invention is tested 100 cycles, and the degree of deviation of the obtained curve is small, indicating that it has excellent electrical stability.

Description

technical field [0001] The invention relates to the technical field of electronic materials and components, in particular to a gate device based on niobium oxide and a preparation method thereof. Background technique [0002] With the advent of the cloud era, big data (Big data) has also attracted more and more attention, and the corresponding big data requires massive storage space. As a strong competitor of the next-generation non-volatile memory devices, high-density cross-matrix memory has broad market prospects. However, one of the main disadvantages of this structure is that leakage current through neighboring memory cells can cause sneak path problems. These leakage currents can cause insignificant memory addressing and reading errors. The sneak path problem also increases power consumption and limits the size of the crossbar array, which can severely impact memory performance. [0003] The gating device has high nonlinear value and on-state current density, reduce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/026H10N70/8833
Inventor 王浩陈傲马国坤何玉立陈钦
Owner HUBEI UNIV
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