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Aluminum-doped zinc oxide film preparation method with wide characteristic scales

An aluminum-doped zinc oxide, characteristic scale technology, applied in the field of photochemistry, can solve the problems of low carrier mobility and high resistivity of AZO films

Inactive Publication Date: 2018-09-28
ZHEJIANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But in general, the carrier mobility and resistivity of the AZO film prepared by the magnetron sputtering method using conventional argon as the working gas are relatively low.

Method used

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  • Aluminum-doped zinc oxide film preparation method with wide characteristic scales

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Embodiment Construction

[0015] This embodiment specifically includes the following steps

[0016] 1) AZO thin films were grown by magnetron sputtering. Al doped with 2-3% Al 2 O 3 The / ZnO ceramic is the sputtering target, the purity of the target is 99.995%, the diameter is 2 inches, and the ordinary glass is used as the substrate. First, the glass was ultrasonically cleaned with detergent, acetone, and absolute ethanol in sequence, rinsed with deionized water several times after each cleaning, and finally dried with nitrogen before being placed in the sputtering chamber. Before being put into the sputtering chamber, the targets were ultrasonically cleaned with acetone, rinsed with deionized water, soaked in isopropanol solution, and finally dried with nitrogen. The background vacuum of the sputtering chamber is 5×10 -4 Pa, the distance between the target and the glass substrate is 6.0cm, the working pressure is 0.6Pa, the working gas is a mixed gas of argon and hydrogen, and the mass fraction o...

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Abstract

The invention discloses an aluminum-doped zinc oxide film preparation method with wide characteristic scales. A layer of AZO film is grown on a glass substrate by using magnetron sputtering; the AZO film is corroded by using diluted hydrochloric acid and acrylic acid mixed liquid to obtain an optical capture structure with large characteristic scales; a layer of AZO film is grown on the corroded AZO film by using magnetron sputtering; acrylic acid of 0.5-1.0 ml is added in diluted hydrochloric acid solution of 500 ml with a concentration of 0.3% for continuous shaking and stirring until the mixing is uniform; and the prepared AZO film is put inside for dipping by 30-70 seconds, then, is taken out, and is flushed by de-ionized water. The diluted hydrochloric acid-acrylic acid solution withdifferent concentrations is adopted to obtain the optimal capture structures with different characteristic scales on the surface of AZO so as to achieve the sunlight capture effect with wider scale range.

Description

technical field [0001] The invention belongs to the technical field of photochemistry, and in particular relates to a preparation method of an aluminum-doped zinc oxide thin film with wide characteristic scale. Background technique [0002] Due to the excellent light transmission and conductivity properties of transparent conductive oxide (TCO) films, TCO films are now widely used in flat panel displays and solar cells. Since the effective absorption layer of thin-film batteries is relatively thin, generally several microns thick, it is very important to improve the absorption of light by thin-film batteries compared with crystalline silicon batteries to increase the short-circuit current of the battery. As the front-end electrode of thin-film solar cells, the surface of the TCO thin film generally also has a light-trapping structure to realize reflection, refraction and scattering of incident light. In the light path, the absorption of light is increased to increase the sh...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
Inventor 黄仕华陆肖励井维科
Owner ZHEJIANG NORMAL UNIVERSITY