A gold -convex block manufacturing process of an integrated circuit chip
A technology of integrated circuit and manufacturing process, applied in the field of gold bump manufacturing process
Active Publication Date: 2020-07-17
JIANGSU UNION SEMICON
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Problems solved by technology
[0003] The present invention aims at the color problem of the gold bump of the integrated circuit chip in the prior art, and provides a gold bump manufacturing process of the integrated circuit chip, through the improvement and adjustment of the gold bump manufacturing process, so that the color of the gold bump conforms to client needs
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Embodiment 2
[0045] Such as figure 2 Shown is the gold bump manufacturing process of the integrated circuit chip of this embodiment, which specifically includes the following steps:
[0046] Such as figure 1 The gold bump manufacturing process of the integrated circuit chip of the present embodiment specifically includes the following steps:
[0047] The first step, sputtering: sputtering a metal film on the surface of the integrated circuit chip; the metal film is the bottom titanium tungsten film and the upper gold film;
[0048] The second step, photoresist coating: use a photoresist coating machine to coat a photoresist with a thickness of 35 microns on the surface of the chip; Organic matter with light-dissolving properties, so as to facilitate fixed-point exposure in the next step, and remove the photoresist at the position where the gold bump needs to be grown;
[0049] The third step is exposure: use an exposure machine to irradiate the photoresist at the position where the gol...
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The invention relates to a gold bumping manufacturing process of an integrated circuit chip in the semiconductor technical field; the specific process comprises the following steps: carrying out metallic film sputtering and photoresistive coating in order on the surface of an integrated circuit chip; exposing and developing photoresistance in the gold bumping growing position so as to form a window in the gold bumping growing position, electrogilding the window position so as to form a gold bumping, removing photoresistance on two sides of the gold bumping, carrying out plasma and etching treatment on the surface of the integrated circuit chip and the gold bumping so as to remove a gold layer in the sputtering metallic film, solely carrying out plasma and gold etching treatment on the surface of gold bumping again, and finally etching a sputtering tungsten titanium film. The gold bumping making process respectively carries out plasma treatment and gold etching treatment on the surfaceof the integrated circuit chip for two times, thus respectively removing the sputtering gold layer on two sides of the gold bumping; the process further etches the gold bumping surface for certain level, thus enlarging the particle gaps on the gold bumping surface, enabling the surface to form loosening apertures, and darkening the gold bumping color via said rough structure.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gold bump manufacturing process for an integrated circuit chip. Background technique [0002] LCD panels widely exist in our daily life, such as mobile phones, tablets, laptops, TVs, etc. The function of the liquid crystal panel is realized through the driver chip packaged around the panel. In the semiconductor packaging manufacturing industry, the gold bump manufacturing process is widely used in the packaging of LCD panel driver chips. Under the conventional process, the surface of the gold bump finally presents a color close to gold. With the development of packaging technology, customers demand that the surface color of gold bumps be dull and black, so that when it is subsequently packaged on the panel, the confirmation of the lamination result can be clearer and more accurate. Contents of the invention [0003] The present invention aims at the color problem of...
Claims
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IPC IPC(8): H01L21/60
CPCH01L24/11H01L2224/1145H01L2224/11462H01L2224/11614H01L2224/11622H01L2224/11
Inventor 时庆楠郑忠周德榕许原诚
Owner JIANGSU UNION SEMICON