ITO coating film target material and preparation method thereof
A target and wet technology, which is applied in the field of ITO coating target and its preparation, can solve the problems of poor uniformity of indium tin oxide, high requirements for production equipment, and difficulty in industrial production, and achieve safe function, good adhesion, and preparation convenient effect
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[0025] see figure 1 Shown, preparation method of the present invention, as following steps:
[0026] A. Preparation of Indium Tin Oxide
[0027] The ITO target is mainly made of indium oxide (In 2 o 3 ) and tin oxide (SnO 2 ) composed of nanometer metal oxides, has good electrical conductivity, transparency, heat insulation, UV protection and other properties, and In can be adjusted according to different uses 2 o 3 and SnO 2 The proportion of ITO targets with different characteristics can be obtained. Regular products are In 2 o 3 :SnO 2 =9:1. In the oxide conductive film, the In doped with Sn 2 o 3 (ITO) film has the highest light transmittance and good electrical conductivity, and it is easy to etch fine patterns in acid solution, of which the light transmittance is over 90%. In ITO, its light transmittance and resistance can be determined by In 2 o 3 with SnO 2 ratio to control.
[0028] The steps of the method adopted in this embodiment are as follows:
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