Method for preparing copper iodide P-type transparent semi-conductor thin film material at room temperature

A technology of cuprous iodide and thin film materials, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of low electrical and optical properties, complicated equipment operation, high reaction temperature, etc., and achieve the goal of reaction The effect of high efficiency, simple equipment and short reaction time

Active Publication Date: 2018-10-19
HARBIN INST OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the common disadvantages of high reaction temperature, complex equipment operation and long reaction time in existing physical methods, and the cuprous iodide thin film prepared by traditional copper film iodide film formation has low electrical and optical properties The problem of the problem, and provide a kind of method for preparing cuprous iodide P-type transparent semiconductor film material under room temperature

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  • Method for preparing copper iodide P-type transparent semi-conductor thin film material at room temperature
  • Method for preparing copper iodide P-type transparent semi-conductor thin film material at room temperature

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specific Embodiment approach 1

[0026] Specific embodiment one: the method for preparing cuprous iodide P-type transparent semiconductor film material under a kind of room temperature of present embodiment is to carry out according to the following steps:

[0027] 1. Cleaning of target and substrate:

[0028] Under the condition of ultrasonic power of 200W-400W, the Cu metal target was placed in acetone, alcohol and deionized water for 10min-30min respectively to obtain a clean target; under the condition of ultrasonic power of 50W-150W, the The quartz substrate material with a size of 20mm×20mm×1mm was washed in acetone, alcohol and deionized water for 5min to 15min respectively, and dried to obtain a clean substrate material;

[0029] 2. Preparation of Cu thin film:

[0030] (1) Preparation before coating:

[0031] Install the clean target material to the target position, place the clean substrate material at the center of the sample stage in the high-vacuum magnetron sputtering coating system, and turn ...

specific Embodiment approach 2

[0043]Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, under the condition of ultrasonic power of 200W, the Cu metal target is sequentially placed in acetone, alcohol and deionized water for 15 minutes, respectively, to obtain a clean Under the condition of ultrasonic power of 50W, the quartz substrate material with the size of 20mm×20mm×1mm was washed in acetone, alcohol and deionized water for 5min respectively, and then dried to obtain a clean substrate material. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0044] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in step 2 (1), the clean target is installed to the target position, and the clean substrate material is placed in high vacuum magnetron sputtering. At the center of the sample stage in the spray coating system, turn on the equipment to vacuum until the vacuum reaches 6×10 -5 Pa. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a method for preparing copper iodide P-type transparent semi-conductor thin film material at room temperature and relates to a preparation method of the copper iodide P-type transparent semi-conductor thin film material. The method aims to overcome the defects of the high reaction temperature, complex equipment operation and long reaction time existing in an existing physical method universally, and solve the problem that the electrical property and the optical property of copper iodide thin films prepared through traditional copper film one-time iodization film formingare low. The method for preparing the copper iodide P-type transparent semi-conductor thin film material at the room temperature is completed through the steps of washing a target material and a substrate, preparing a Cu thin film, preparing a single-layer CuI thin film, and preparing a CuI composite thin film circularly.

Description

technical field [0001] The invention relates to a preparation method of cuprous iodide P-type transparent semiconductor film material. Background technique [0002] Transparent conductive materials (TCs) are widely used in optoelectronic devices, such as transparent electrodes of solar cells, flat panel displays, light-emitting diodes, etc. However, although the existing p-type has good conductivity, the transmittance is low (30% to 40%); The compatibility is not good. [0003] Cuprous iodide (CuI) has three main crystal structures, among which γ-CuI is a wide band gap p-type semiconductor material with a band gap of 3.1eV, transparent in the visible light range, and low resistivity, γ -CuI is widely used in the manufacture of semiconductor devices. With the wide application of γ-CuI, more and more researches have been done on it. In addition, CuI is a non-toxic and environmentally friendly compound, and its constituent elements are abundant in nature. [0004] A variet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/18C23C14/06
CPCC23C14/0694C23C14/185C23C14/35C23C14/5846
Inventor 朱嘉琦耿方娟杨磊代兵郭帅
Owner HARBIN INST OF TECH
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