[0029] In order to make it easy to understand the technical means, creation features, achieved goals and effects of the present invention, the present invention will be further described below with reference to the specific embodiments.
[0030] like Figure 1 to Figure 5 As shown in the present invention, a manufacturing process for a conductive circuit of a chip, the process includes the following steps:
[0031] Step 1: Grinding and thinning the wafer to the set size and thickness;
[0032] Step 2: After grinding the wafer to a qualified size in step 1, put the wafer into the plasma etching machine, and etch away the part that needs to be etched on the back of the wafer to form grooves, so that the conductive blocks on the front part of the wafer are exposed. ;
[0033] Step 3: After the second step is completed, the backside of the wafer is coated with a polymer material to form an insulating layer and then bake;
[0034] Step 4: Break down the insulating layer and the conductive block formed on the back of the wafer in step 3 by means of laser breakdown, so that the conductive block at the breakdown position is exposed from the insulating layer;
[0035] Step 5: After the completion of Step 4, an electroplating copper layer with a certain thickness is formed on the back of the wafer by electroplating through electroplating equipment;
[0036] Wherein, the electroplating equipment in the step 5 includes a reaction chamber 1, a magnetic ring 2, a wafer 3, a holder 4 and a permanent magnet 5, the reaction chamber 1 is cylindrical, and the wafer 3 is carried out in the reaction chamber 1. Electroplating reaction, the upper part of the reaction chamber 1 is provided with a liquid inlet, and the bottom of the reaction chamber 1 is provided with a liquid outlet, and the liquid outlet and the liquid inlet are connected through a pump and a hose to realize the recycling of the electroplating solution; The magnetic rings 2 are horizontally fixed in the reaction chamber 1, and the magnetic rings 2 are evenly arranged in multiple layers in the reaction chamber 1; A group of wafers 3 are connected by the cage 4, and the edges of the upper and lower wafers 3 as a group are sealed by the sealing plate 6, so that a sealed space is formed between the two wafers 3, thereby realizing the alignment of the wafers. The single-sided electroplating of the circle 3; the cage 4 is located in a closed space of a group of wafers 3; the permanent magnet 5 is arranged inside the cage 4, and the permanent magnet 5 and the magnetic ring 2 produce opposite directions to the wafer 3. Therefore, the suspension of the wafer 3 above the magnetic ring 2 is realized, and the suspension of the wafer 3 in the electroplating solution ensures the uniformity of electroplating.
[0037]The cage 4 is composed of inner and outer rings arranged coaxially. The cross-section of the ring is rectangular. The inner and outer rings are connected by a bracket 7. The interior of the inner and outer rings of the cage 4 is a cavity structure, and the cavity is In a negative pressure environment, adsorption holes are provided on the upper and lower surfaces of the inner and outer rings, and the adsorption holes are communicated with the cavity. In combination, the wafer 3 is fixed on the holder 4 by using negative pressure; the permanent magnet 5 is fixed in the cavity of the holder 4 . When the wafer 3 is placed on the inner and outer rings of the cage 4, the wafer 3 is in contact with the suction holes on the upper and lower surfaces of the inner and outer rings of the cage 4. Since the cavity of the inner and outer rings is a negative pressure environment, the wafer 3 is smoothly adsorbed on the upper and lower surfaces of the cage 4 .
[0038] The upper and lower surfaces of the holder 4 are provided with a sealing edge 8 , and the sealing edge 8 is located between the wafer 3 and the holder 4 , and the sealing edge 8 is used to realize the sealing between the wafer 3 and the holder 4 , and improve the performance of the wafer 3 . Adsorption effect on cage 4 . The existence of the sealing edge 8 makes it difficult for outside air to enter between the wafer 3 and the holder 4 , thereby improving the sealing performance between the wafer 3 and the holder 4 .
[0039] The liquid inlets on the side wall of the reaction chamber 1 are arranged obliquely and the number is multiple, and the liquid inlets are evenly arranged along the circumference of the reaction chamber 1; the sealing plate 6 is provided with a dial plate 61 on the outside; the dial plate 61 is inclined along the outer circumferential surface of the sealing plate 6, the inclination direction of the dial plate 61 is the same as the direction of the liquid inlet, and the dial plate 61 is used to drive the wafer 3 in the electroplating solution through the movement of the electroplating solution injected by the liquid inlet. turn. When the electroplating solution is injected into the reaction chamber 1 in an inclined shape, the liquid entering the reaction chamber 1 is in a state of rotational motion in the reaction chamber 1, and the rotation of the liquid pushes the dial 61 to move, so that the wafer 3 moves as a whole in the electroplating solution, which is beneficial for electroplating. The liquid has the effect of stirring and ensures the uniformity of electroplating.
[0040] The holder 4 is also provided with a coil 9 , and the coil 9 is fixed on the bracket 7 of the holder 4 in a circular shape. When the wafer 3 moves in the electroplating solution with the dial 61, the coil 9 on the holder 4 rotates synchronously. Since the magnetic ring 2 is located under the holder 4, the coil 9 is in a magnetic field environment, and the rotation of the coil 9 realizes the correct The cutting of the magnetic induction line generates an induced current inside the coil 9, the coil 9 heats up, and the electroplating solution is heated, thereby improving the effect of electroplating.
[0041] The cage 4 is provided with a cylinder body 10 and a cylinder body 2 11 on the inner side of the inner ring; the cylinder body 1 10 and the cylinder body 2 11 are connected by a piston rod, and the left chamber of the cylinder body 2 11 is connected. Mercury is provided, and the air inlet of the left chamber of the cylinder block 10 is communicated with the cavity structure of the inner and outer rings of the cage 4 through the trachea, so as to continuously pump negative pressure to the cavity of the cage 4 . When the temperature of the coil 9 rises due to the existence of the induced current, the mercury in the cylinder 2 11 is vaporized, and pushes the piston rod to move to the right. -10 The negative pressure environment of the left chamber continuously draws negative pressure to the cavity of the inner and outer rings of the cage 4, so as to avoid the increase of the temperature and the expansion of the gas volume in the cavity structure of the cage 4, which causes the cage 4 to cause the wafer to be damaged. 3, the adsorption capacity is weakened.
[0042] The specific operation process is as follows:
[0043] When working, first place the wafer 3 on the inner and outer rings of the cage 4, and the wafer 3 is in contact with the adsorption holes on the upper and lower surfaces of the inner and outer rings of the cage 4. Since the cavity of the inner and outer rings is a negative pressure environment, the wafer 3 is blocked. It is smoothly adsorbed on the upper and lower surfaces of the cage 4 . The existence of the sealing edge 8 makes it difficult for outside air to enter between the wafer 3 and the holder 4 , thereby improving the sealing performance between the wafer 3 and the holder 4 . Since the permanent magnet 5 and the magnetic ring 2 generate opposing forces on the wafer 3, the suspension of the wafer 3 above the magnetic ring 2 is realized, and the wafer 3 is suspended in the electroplating solution.
[0044] When the electroplating solution is injected into the reaction chamber 1 in an inclined shape, the liquid entering the reaction chamber 1 is in a state of rotational motion in the reaction chamber 1, and the rotation of the liquid pushes the dial 61 to move, so that the wafer 3 moves as a whole in the electroplating solution, which is beneficial for electroplating. The liquid has the effect of stirring and ensures the uniformity of electroplating.
[0045] When the wafer 3 moves in the electroplating solution with the dial 61, the coil 9 on the holder 4 rotates synchronously. Since the magnetic ring 2 is located under the holder 4, the coil 9 is in a magnetic field environment, and the rotation of the coil 9 realizes the correct The cutting of the magnetic induction line generates an induced current inside the coil 9, the coil 9 heats up, and the electroplating solution is heated, thereby improving the effect of electroplating.
[0046] When the temperature of the coil 9 increases due to the existence of the induced current, the mercury in the cylinder 2 11 is vaporized, which pushes the piston rod to move to the right, and the piston rod moves to the right to reduce the air pressure in the left chamber of the cylinder 10, and the cylinder -10 The negative pressure environment of the left chamber continuously draws negative pressure to the cavity of the inner and outer rings of the cage 4, so as to avoid the increase of temperature and the expansion of the gas volume in the cavity structure of the cage 4, which will cause the cage 4 to affect the wafers. 3, the adsorption capacity is weakened.
