Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic semiconductor composition, organic thin film comprising same, and use thereof

一种有机薄膜、组合物的技术，应用在半导体器件、半导体/固态器件制造、有机化学等方向，能够解决印刷适应性不明确等问题

Inactive Publication Date: 2018-10-23
NAT INST OF ADVANCED IND SCI & TECH +1
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, Patent Document 5 is about the simplicity of the process, but it includes issues such as unclear applicability to specific coating and printing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic semiconductor composition, organic thin film comprising same, and use thereof
  • Organic semiconductor composition, organic thin film comprising same, and use thereof
  • Organic semiconductor composition, organic thin film comprising same, and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0164] Example 1 (composition of the present invention, organic thin film forming material comprising the composition, and organic thin film obtained using the forming material)

[0165] Compounds No.1 and No.3 of the specific example were dissolved in chlorobenzene at a mass ratio of No.1:No.3=9:1 so that the total concentration of the compounds became 0.1%. This solution was dropped onto a silicon substrate having a silicon oxide film of 100 nm, blade-coated at a rate of 2.5 μm / sec using a glass doctor blade, and then dried at 70° C. The film thickness of the obtained organic thin film is about 9nm, such as image 3 (In the figure, the arrow indicates the scanning direction of the glass scraper, and the dotted line indicates the area where the film is effectively formed in the method described in this example.) As shown, a homogeneous film with no cracks in a wide range was obtained. film.

Embodiment 2

[0166] Example 2 (composition of the present invention, organic thin film forming material comprising the composition, and organic thin film obtained using the forming material)

[0167] In addition to dissolving the specific example compounds No.1 and No.3 in chlorobenzene at a mass ratio of No.1:No.3=5:5, the total concentration of the compounds becomes 0.1%, and An organic thin film was produced in the same manner as in Example 1. The polarizing microscope image of the obtained organic film is as Figure 4 As shown, a homogeneous film without cracks in a wide range was obtained.

Embodiment 3

[0168] Example 3 (Composition of the present invention, organic thin film forming material comprising the composition, and organic thin film obtained using the forming material)

[0169] In addition to dissolving the specific example compounds No.1 and No.3 in chlorobenzene at a mass ratio of No.1:No.3=3:7 so that the total concentration of the compounds becomes 0.1%, and An organic thin film was produced in the same manner as in Example 1. The film thickness of the obtained organic thin film is 9 to 18nm, and polarizing microscope image is as Figure 5 As shown, a homogeneous film without cracks in a wide range was obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
coating thicknessaaaaaaaaaa
boiling pointaaaaaaaaaa
solubility coefficientaaaaaaaaaa
Login to View More

Abstract

In the present invention, a composition comprising two types of thienothiophene compounds selected from the group consisting of the compounds indicated by formulas (1) to (4) (in formulas (1) to (4),either one of R1 and R2 represents an alkyl group, an aromatic hydrocarbon group having an alkyl group or a heterocyclic group having an alkyl group, and the other represents a hydrogen atom, an aromatic hydrocarbon group, a heterocyclic group or a substituent represented by formula (5) (in formula (5), R3 represents an aromatic hydrocarbon group or a heterocyclic group) can form a homogeneous organic thin film over a large area, and an organic semiconductor device including the organic thin film is capable of exhibiting high mobility.

Description

technical field [0001] The present invention relates to a composition containing a plurality of organic semiconducting low-molecular compounds, a highly homogeneous organic thin film obtained by using the composition, and an organic semiconductor device including the organic thin film. More specifically, the present invention relates to a composition suitable for the formation of a wide range of homogeneous organic thin films that can be used in simple methods such as printing and coating, and also relates to an organic film using these. semiconductor device. Background technique [0002] In recent years, it has become possible to manufacture soft organic semiconductor devices using plastic materials that are not suitable for manufacturing processes that require high-temperature processes, and in addition, it is possible to greatly improve the efficiency of the device manufacturing process itself, so research and development involving organic semiconductors using printing te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30C07D495/04C07D519/00H01L29/786H01L51/05H01L51/40
CPCC07D519/00H01L29/786C07D495/04H10K10/40H10K85/00H10K85/6576H10K10/00H10K10/84H01L29/78603
Inventor 荒井俊人长谷川达生井上悟
Owner NAT INST OF ADVANCED IND SCI & TECH
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com