Gallium nitride single crystal growth device

Abstract

The invention discloses a gallium nitride single crystal growth device, and relates to the technical field of semiconductor material preparation devices. The device mainly uses a nitrogen plasma evaporation reflux method to form a supersaturated melt on a crystal growth interface to prepare a gallium nitride crystal. Nitrogen plasma is used for volatilizing a fluxing gallium-sodium-nitrogen melt,gallium and sodium elements are volatilized at a high temperature and cooled on a condenser to form a gallium-sodium melt. The gallium-sodium melt is refluxed into a reflux system, sodium nitride is continuously put into the reflux system, the thermal decomposition of the sodium nitride makes the melt keep in a nitrogen saturated state, and the saturated melt is refluxed onto a high-temperature solid-liquid interface to form a supersaturated melt for crystal growth.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation devices, in particular to a gallium nitride single crystal growth device. Background technique [0002] Gallium nitride (GaN) is a wide bandgap semiconductor material with a bandgap as high as 3.4eV. It is mainly used in the preparation of microwave power transistors and blue light-emitting devices. It can produce higher power, higher efficiency, Larger broadband microwave devices can produce high conversion efficiency, high operating frequency, high temperature power electronic devices. It is widely used in the fields of communication, satellite, aerospace and aviation, especially with the coming of 5G, GaN will usher in explosive growth. [0003] Because the pressure of directly preparing GaN by the melt method is very high, which needs to reach 93Kbar (2427°C), it is difficult to grow GaN single crystal directly by the melt method. Metal organic compound chemical va...

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Problems solved by technology

[0003] Due to the high pressure of the direct preparation of GaN by the melt method, which needs to reach 93Kbar (2427°C), it is difficult to grow GaN single crystal directly by the melt method

Metal organic compound chemical vapor deposition (MOCVD) method is usually used to grow GaN single crystal, but the growth efficiency is very slow and the preparation cost is expensive

In recent years, the sodium co-solvent method has been used to grow gallium nitride single crystals under low temperature and low pressure environment. However, due to the low solubility of nitrogen, the transport of nitrogen is very slow, and it is difficult to prepare large GaN single crystals.

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