Two-dimensional magnetic field sensor

A two-dimensional magnetic field and sensor technology, which is applied in the field of magnetic sensors, can solve the problems of occupying a large space, measurement system error, and complicated process, and achieve the effects of easy miniaturization, high precision, and strong anti-interference ability

Active Publication Date: 2018-10-30
钱正洪 +1
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AI Technical Summary

Problems solved by technology

[0003] The existing sensors capable of two-dimensional magnetic field measurement mainly obtain the magnetic field strength in two dimensions by installing two orthogonal magnetic sensors on the measurement plane; the patent No. 02147304.8 describes a two-dimensional magnetic field A sensor comprising a first MI element configured to detect a first coordinate axis component of an external magnetic field, a second MI element configured to detect a second coordinate axis component of an external magnetic field, and an integrated circuit; which This kind of magnetic field sensor will bring errors to the measurement system and occupy a large space. At the same time, this structure needs to be realized by packaging two chips, which is not conducive to integration
There is another method of measuring the two-dimensional magnetic field by two magnetic tunnel junction sensors, wherein the first magnetic tunnel junction sensor includes a first pinned layer and a first sensing element formed on the first pinned layer , the second magnetic tunnel junction sensor includes a second pinned layer and a second sensing element formed on the second pinned layer and orthogonal to the first sensing element; this design has complicated process and difficult implementation Difficulty and other issues

Method used

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Embodiment 1

[0026] In Embodiment 1, two groups of four magnetic resistors on opposite sides of the flux guide 1 form two Wheatstone bridges respectively. The two Wheatstone bridges have the same structure, the resistance in the gap where the magneto-sensitive resistor is placed on one side is the first magneto-resistance resistor R1, and the other resistor is the second magneto-resistance resistor R2; the resistance in the gap where the magneto-sensitive resistor is placed on the other side is The third magnetoresistive resistor R3 and the other resistor is the fourth magnetoresistive resistor R4.

[0027] like Figure 5 As shown, one end of the first reluctance resistor R1 is connected to one end of the second reluctance resistor R2 and then connected to the VCC input power supply; one end of the third reluctance resistor R3 is connected to one end of the fourth reluctance resistor R4 and then grounded; the first The other end of the magnetoresistance resistor R1 is connected to the oth...

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Abstract

The invention relates to a two-dimensional magnetic field sensor. The two-dimensional magnetic field sensor comprises a magnetic flux guiding device, wherein the magnetic flux guiding device is arranged on a substrate, an external frame of the magnetic flux guiding device is an annular or semi-annular structure, and according to a symmetric axis, the magnetic flux guiding device is divided into two or four areas; each area is provided with a magnetoresistor placement gap; each area is provided with a pair of magnetoresistors, the magnetoresistors are all arranged on the substrate, the magneticflux guiding device covers one magnetoresistor, and the other magnetoresistor is arranged in the corresponding magnetoresistor placement gap; and two pairs of magnetoresistors on two diagonal areas are connected into two sets of wheatstone bridge structures respectively. The two-dimensional magnetic field sensor has the advantages that the two-dimensional magnetic field sensor adopts single-coreintegration, and the integration level is high; the magnetoresistors in magnetic flux guiding device gaps and the magnetoresistors covered by the magnetic flux guiding device are utilized to compose two sets of wheatstone bridge structures to form differential output; compared with a former two-dimensional magnetic field sensor, the precision is higher, the antijamming capability is strong, the miniaturization and integration are easier, and double bridges can effectively inhibit temperature drift.

Description

technical field [0001] The invention belongs to the field of magnetic sensors and relates to a two-dimensional magnetic field sensor. Background technique [0002] The early magnetic field sensor was gradually developed with the progress of magnetic measuring instruments. With the rapid development of information industry, industrial automation, transportation, power electronics technology, office automation, household appliances, medical instruments, etc. and the application of electronic computers With the development of microelectronics technology, magnetic field sensors are developing in the direction of miniaturization, integration and intelligence, and the performance requirements for magnetic field sensors are also continuously improving. [0003] The existing sensors capable of two-dimensional magnetic field measurement mainly obtain the magnetic field strength in two dimensions by installing two orthogonal magnetic sensors on the measurement plane; the patent No. 02...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/04
CPCG01R33/04
Inventor 钱正洪白茹康洁胡亮
Owner 钱正洪
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