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GaN-based light emitting diode chip and preparation method thereof

A light-emitting diode and chip technology, which is applied in the field of optoelectronics, can solve the problems of low light extraction efficiency and the inability to obtain light from the bottom of the electrode, etc., and achieve the effect of increasing light output efficiency and simple process

Inactive Publication Date: 2018-11-02
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Aiming at the problem that the existing GaN-based LED chips cannot obtain light from the bottom of the electrode, resulting in low light-emitting efficiency, the present invention provides a GaN-based light-emitting diode chip;

Method used

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  • GaN-based light emitting diode chip and preparation method thereof
  • GaN-based light emitting diode chip and preparation method thereof
  • GaN-based light emitting diode chip and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] A GaN-based light-emitting diode chip, which sequentially includes a sapphire substrate 1, an N-GaN layer 2, a quantum well layer 3, a P-GaN layer 4, a current spreading layer 6, a passivation layer 9, and a P electrode from bottom to top 7. The P electrode 7 is formed on the current spreading layer 6 , and the metal reflective layer 5 is arranged between the current spreading layer 6 and the P electrode 7 . Such as figure 1 shown.

[0050] The metal reflective layer 5 is arranged under the current spreading layer 6, the length of the cross section of the metal reflective layer 5 is smaller than the length of the cross section of the P electrode 7, the metal reflective layer 5 is an Al film, and the thickness of the Al film is 0.135 μm.

[0051] For the same GaN epitaxial wafer, there is no metal reflective layer, the metal reflective layer is located between the electrode and the current spreading layer, and the metal reflective layer described in this embodiment is l...

Embodiment 2

[0056] The preparation method of the GaN-based light-emitting diode chip described in embodiment 1 includes the following steps:

[0057] (1) growing N-GaN layer 2, quantum well layer 3, and P-GaN layer 4 sequentially on sapphire substrate 1;

[0058] (2) A layer of 0.135 μm Al film is deposited on the P-GaN layer 4; a positive photoresist with a thickness of 1.8 μm is coated on the surface of the Al film; the positive photoresist is removed by conventional photolithography and chemical corrosion , to produce a metal reflective layer 5 . The cross-sectional view of the GaN-based light-emitting diode chip prepared in step (2) is as follows figure 2 shown.

[0059] (3) Deposit a layer of ITO film with a thickness of 0.12 μm on the surface of the GaN-based LED chip prepared in step (2); coat a positive photoresist with a thickness of 3.5 μm on the surface of the ITO film; obtain the P region by photolithography Mesa: Etch the N-region ITO film, perform conventional ICP etchin...

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Abstract

The invention relates to a GaN-based light emitting diode chip and a preparation method thereof. The GaN-based light emitting diode chip sequentially comprises a sapphire substrate, an N-GaN layer, aquantum well layer, a P-GaN layer, a current expansion layer and a passivation layer from bottom to top and further comprises a P electrode, wherein the P electrode is formed on the current expansionlayer, and a metal reflection layer is arranged on the P-GaN layer and located under the current expansion layer. According to the GaN-based light emitting diode chip, by arranging the metal reflection layer between an epitaxial layer and the electrode, light emitted out from the lower portion of the electrode can be reflected back into the chip through the metal reflection layer to be reflected multiple times in the chip to achieve the light-out effect finally, the process is easy and convenient to operate, and the light-out efficiency is improved; and the problem that the surface electrode generates the high junction temperature due to the fact that too much light is absorbed to influence usage of the chip cannot be generated, the process is easy and convenient to operate, and the methodis suitable for large-scale production.

Description

technical field [0001] The invention relates to a GaN-based light-emitting diode chip and a preparation method thereof, belonging to the field of optoelectronic technology. Background technique [0002] LED is a new light source for lighting in the 21st century. Under the same brightness, the power consumption of semiconductor lamps is only 1 / 10 of that of ordinary incandescent lamps, but the life span can be extended by 100 times. The LED device is a cold light source with high luminous efficiency, low working voltage, low power consumption, small size, flat packaging, easy to develop thin and light products, strong structure and long life. The light source itself does not contain harmful substances such as mercury and lead. No infrared and ultraviolet pollution, no pollution to the outside world during production and use. Therefore, semiconductor lamps have the characteristics of energy saving, environmental protection, and long life. Just like transistors replace electro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/46
CPCH01L33/46H01L2933/0025
Inventor 李晓明陈康闫宝华刘琦肖成峰徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS