Novel chip light source structure and preparation process thereof

Abstract

Disclosed is a novel chip light source structure; the novel chip light source structure comprises an epitaxial structure, an N surface electrode layer and a P surface electrode layer, wherein the epitaxial structure comprises a diamond substrate, a silicon carbide transition layer, an aluminum nitride transition layer, a GaP buffer layer, a GaP current expansion and ohmic contact layer, an AlGaInPtransition and lower limiting layer, a light-emitting layer, an AlGaInP upper limiting layer and a window layer which are sequentially arranged from the bottom up; the N surface electrode layer or the P surface electrode layer is arranged on the window layer; the N surface electrode layer or the P surface electrode layer is arranged on the GaP current expansion and ohmic contact layer; the diamond substrate is used as an epitaxial growth substrate, and the silicon carbide transition layer, the aluminum nitride transition layer and gallium phosphide are used as buffer layers, so that the problem of light absorption of the substrate is avoided, material growth defects caused by lattice mismatch and thermal expansion coefficient mismatch can be inhibited, the light output capability is greatly improved, and environmental pollution is reduced; and meanwhile, by adopting a molding organic silicon model particle forming process, the light color quality is high, the reliability is high, theprocess is optimized, and the cost is lowered.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to a novel chip light source structure and a preparation process thereof. Background technique [0002] Light-emitting diodes of different colors are prepared by different material systems. For yellow, orange, and red light-emitting diodes, the best performance is now made of aluminum gallium indium phosphide materials, which are on GaAs (gallium arsenide) substrates grown, and its epitaxial material structure from bottom to top is GaAs substrate, GaAs buffer layer, n-type aluminum gallium indium phosphide [(Al x Ga 1-x ) 0.5 In 0.5 P] lower confinement layer, intrinsic aluminum gallium indium phosphide [(Al x Ga 1-x ) 0.5 In 0.5 P / (Al y Ga 1-y ) 0.5 In 0.5 P] (x¹y) light emitting region (also called active region), p-type aluminum gallium indium phosphide [(Al x Ga 1-x ) 0.5 In 0.5 P] upper confinement layer and p-type GaP (gallium phosphide) current spreading layer. ...

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Problems solved by technology

However, this method is complicated in process, the consistency of product indicators is not good, and a large amount of chemical waste liquid containing arsenic (As) is produced during the corrosion process, which needs further treatment, which is not good for environmental protection.

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