Method for fabricating light emitting diode
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as poor heat dissipation, high manufacturing cost, and long growth time
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[0013] The present invention discloses a light emitting diode 10 (shown in Image 6 ) method of manufacture. In an embodiment according to the present invention, a light-emitting diode is manufactured by using an AlGaAs epitaxial wafer grown by a liquid phase epitaxial growth method. The aluminum gallium arsenide epitaxial wafer 100, which is generally grown by the liquid phase epitaxial growth method, has the advantage of low cost, such as figure 1 shown. The AlGaAs epitaxial wafer 100 has a first substrate 120 and an epitaxial layer 140 , and the epitaxial layer 140 includes a lower confinement layer 142 , an active layer 144 and an upper confinement layer 146 . refer to figure 1 , the aluminum gallium arsenide epitaxial wafer 100 in this embodiment is a double heterostructure (double heterostructure, DH) red light emitting diode epitaxial wafer, the wavelength is about 660nm, and it has a p-type gallium arsenide substrate 120, p Type AlGaAs lower confinement layer 142 (...
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