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Method for fabricating light emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of unfitness, poor heat dissipation, and high manufacturing costs

Active Publication Date: 2006-07-05
EPISTAR CORP
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AI Technical Summary

Problems solved by technology

However, this method must grow a very thick light-transmitting substrate, thus making the growth time too long and making the manufacturing cost higher
In addition, since the AlGaAs substrate has the same disadvantage of poor heat dissipation as the GaAs substrate, it is not suitable for operation at high currents
[0004] Another disadvantage of commercial aluminum gallium arsenide epitaxial chips is that their surface often has ripple or terrace stripes and bends, which makes the subsequent grain manufacturing process more difficult
[0005] Therefore, there is a need for a method of manufacturing a light-emitting diode, which can convert the epitaxial chip of a light-emitting diode from a substrate with poor thermal conductivity to a substrate with good thermal conductivity when the surface of the epitaxial chip of the light-emitting diode is uneven or curved, so as to improve Heat dissipation characteristics of light-emitting diodes and solve the problem of substrate light absorption

Method used

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  • Method for fabricating light emitting diode
  • Method for fabricating light emitting diode
  • Method for fabricating light emitting diode

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Embodiment Construction

[0013] The present invention discloses a light emitting diode 10 (shown in Image 6 ) manufacturing method. In an embodiment according to the present invention, the light emitting diode is fabricated using a commercial AlGaAs epitaxial chip grown by a liquid epitaxy method. The commercial aluminum gallium arsenide epitaxy chip 100 generally grown by liquid epitaxy has the advantages of low cost, such as figure 1 shown. The commercial AlGaAs epitaxial chip 100 has a first substrate 120 and an epitaxial layer 140 , and the epitaxial layer 140 includes a lower confinement layer 142 , an active layer 144 and an upper confinement layer 146 . refer to figure 1 , in this embodiment, the commercial aluminum gallium arsenide epitaxy chip 100 is a double heterostructure (double heterostructure, DH) red light emitting diode epitaxy chip with a wavelength of about 660 nm, and has a p-type gallium arsenide substrate 120, p-type aluminum gallium arsenide lower confinement layer 142 (abo...

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Abstract

Polycrystalline chip of light emitting diode (LED) is provided first. The chip of LED includes first base plate and polycrystalline layer. Surface of polycrystalline layer of the chip is evened. At least an ohmic contact layer is formed on part of the evened surface. Metal light reflection layer is formed to cover the ohmic contact layer and polycrystalline chip of LED. Barrier to diffusion layer is formed on the metal light reflection layer. Second base plate is jointed to the barrier to diffusion layer, and then first base plate is removed.

Description

technical field [0001] The invention relates to a method for manufacturing a light emitting diode, in particular to a method for manufacturing a light emitting diode using a commercial light emitting diode epitaxial chip grown by a liquid epitaxy method. Background technique [0002] At present, the aluminum gallium indium phosphide (AlGaInP) light emitting diode epitaxial layer grown by metal organic vapor phase epitaxy (MOVPE) has a wavelength range of up to 645 nm. As for the epitaxial layers of light-emitting diodes with wavelengths greater than 645 nm (mainly infrared and red light-emitting diodes of aluminum gallium arsenide), liquid epitaxy (LPE) is mainly used. [0003] Commercial aluminum gallium arsenide (AlGaAs) epitaxy chips grown by liquid epitaxy not only have relatively high output power, but also have relatively low cost. However, the gallium arsenide substrate will absorb light, so that the light-emitting diode made of commer...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 陈泽澎谢素芬
Owner EPISTAR CORP
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