Method for fabricating light emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of unfitness, poor heat dissipation, and high manufacturing costs
CN1797801AActive Publication Date: 2006-07-05EPISTAR CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
EPISTAR CORP
Publication Date
2006-07-05

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Abstract

Polycrystalline chip of light emitting diode (LED) is provided first. The chip of LED includes first base plate and polycrystalline layer. Surface of polycrystalline layer of the chip is evened. At least an ohmic contact layer is formed on part of the evened surface. Metal light reflection layer is formed to cover the ohmic contact layer and polycrystalline chip of LED. Barrier to diffusion layer is formed on the metal light reflection layer. Second base plate is jointed to the barrier to diffusion layer, and then first base plate is removed.
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Description

technical field

[0001] The invention relates to a method for manufacturing a light emitting diode, in particular to a method for manufacturing a light emitting diode using a commercial light emitting diode epitaxial chip grown by a liquid epitaxy method. Background technique

[0002] At present, the aluminum gallium indium phosphide (AlGaInP) light emitting diode epitaxial layer grown by metal organic vapor phase epitaxy (MOVPE) has a wavelength range of up to 645 nm. As for the epitaxial layers of light-emitting diodes with wavelengths greater than 645 nm (mainly infrared and red light-emitting diodes of aluminum gallium arsenide), liquid epitaxy (LPE) is mainly used.

[0003] Commercial aluminum gallium arsenide (AlGaAs) epitaxy chips grown by liquid epitaxy not only have relatively high output power, but also have relatively low cost. However, the gallium arsenide substrate will absorb light, so that the light-emitting diode made of commer...

Claims

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