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Alloy material for CIG target material bond coat, CIG target material and preparation method of CIG target material
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An alloy material and bottom layer technology, applied in the field of target materials, can solve the problems of poor adhesion between the target material and the backing substrate, pollution of the target material body, complicated process, etc., to achieve good process realization effect, avoid component pollution, process simple effect
Inactive Publication Date: 2018-11-09
LINGFAN RENEWABLE ENERGY TECH BEIJING CO LTD
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[0005] The first purpose of the present invention is to provide a kind of alloy material for CIG target primer layer, to solve the poor adhesion between the target and the backing substrate existing in the prior art, and the process is complicated, and easy to The problem of pollution caused by the target body
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[0065] The preparation method of the CIG target comprises the following steps:
[0066] The primer layer 2 and the body layer 4 are sprayed sequentially on the surface of the backing substrate 1, and if there is an initial layer 3, the primer layer 2, the initial layer 3, and the body layer 4 are formed by spraying in sequence.
[0067] During the preparation process of the CIG target, similar spraying processes can be used between the layers, and the effect of the process is good.
[0068] Specifically, the spraying includes cold spraying and thermal spraying. The spraying conditions of each layer are as follows:
[0069] The cold spraying conditions of the bottom layer include: the pressure is 5-10bar, the temperature is 90-130°C, the spraying speed is 5-20mm / s, and the number of sprayed layers is 1-10 layers; preferably, the pressure is 8-10bar, the temperature The temperature is 95-110℃, the spraying speed is 7-15mm / s, and the number of spraying layers is 3-7 layers;
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Embodiment 1
[0077] The alloy material used for the undercoating of the CIG target described in this embodiment includes the following components by mass percentage: 31% copper, 55% indium, and 14% gallium.
[0078] The preparation method of the alloy material used for CIG target bottoming, the steps are as follows:
[0079] (1) Weigh copper, indium and gallium in proportion, and gradually heat up to 920°C to melt all the raw materials and mix them uniformly;
[0080] (2) The molten material in step (1) is gas atomized, and the gas pressure of the gas atomization is 23-27 bar, and the alloy material for layering the CIG target is collected to obtain the alloy material.
Embodiment 2
[0082] The alloy material used for the undercoating of the CIG target described in this embodiment includes the following components by mass percentage: 30% copper, 58% indium, and 12% gallium.
[0083] The preparation method of the alloy material used for CIG target bottoming, the steps are as follows:
[0084] (1) Weigh copper, indium and gallium in proportion, and gradually heat up to 920°C to melt all the raw materials and mix them uniformly;
[0085] (2) The molten material in step (1) is gas atomized, and the gas pressure of the gas atomization is 23-27 bar, and the alloy material for layering the CIG target is collected to obtain the alloy material.
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Abstract
The invention relates to the technical field of target materials, in particular to an alloy material for a CIG target material bond coat, a CIG target material and a preparation method of the CIG target material. The alloy material for the CIG target material bond coat is prepared from the following components in percentage by mass: 30-36 percent of copper, 50-60 percent of indium and 10-16 percent of gallium. The CIG target material comprises a backing substrate, a bond coat and a body layer; the bond coat is arranged between the backing substrate and the body layer; and the material of the bond coat is an alloy material used for the CIG target material bond coat. The alloy of the target material bond coat is high in contents of the indium and the gallium and the alloy viscosity and is improved in adhesion strength with the backing substrate as the bond coat; and in addition, the components of the bond coat are approximate to the CIG components of a target material body, implementation manners are equivalent, pollution to the target material body can be avoided, and the alloy has better process implementation effect.
Description
technical field [0001] The invention relates to the technical field of targets, in particular to an alloy material used for layering a CIG target, a CIG target and a preparation method thereof. Background technique [0002] The target is a sputtering source that forms various functional thin films on the substrate under appropriate process conditions. During the sputtering process, the target atoms are gradually bombarded and deposited on the substrate to form a thin film. [0003] At present, there are three main methods of target production: casting, binding and spraying. For casting molding, since the target material has gone through the process from the molten state to the solidified state, its adhesion to the backing substrate is generally good. As for the binding target, the low melting point and good thermal conductivity of indium are generally used to realize the binding between the backing substrate and the target. There are certain limitations in making targets b...
Claims
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Application Information
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