L-waveband double-injection double-frequency relativistic magnetron
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- UNIV OF ELECTRONICS SCI & TECH OF CHINA
- Publication Date
- 2018-11-13
- Estimated Expiration
- Not applicable Β· inactive patent
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The invention belongs to the technical field of microwave sources in high-power microwave technology, and specifically relates to an L-band double-injection double-frequency relativistic magnetron, which is based on an axially segmented high-frequency structure and radiates two rows of high-power microwaves with different frequencies. Background technique
[0002] From the perspective of practical high-power microwave systems, the development of high-power microwave systems mainly focuses on four aspects: (1) Miniaturization and compactness of the system to improve power consumption ratio; (2) High repetition frequency work; (3) The frequency can be tuned; (4) Multi-frequency output. Since the birth of relativistic magnetron, it has been attracting much attention, and plans have been made to study it. The initial stage mainly focused on improving the output characteristics of a single relativistic magnetron, including obtaining the maximum peak and ave...