Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

L-waveband double-injection double-frequency relativistic magnetron

A relativistic magnetron and L-band technology, which is applied in the field of microwave sources, can solve problems that are not conducive to system miniaturization and compactness, increase the volume of high-power microwave systems, and magnetron mismatches, etc. Effect, high damage efficiency, large adjustment range

Inactive Publication Date: 2018-11-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Large-sized pulse forming lines greatly increase the volume of the entire high-power microwave system, which is not conducive to the miniaturization and compactness of the system
At present, with the development of pulse power source technology, by selecting a medium with a large dielectric constant as the insulation and energy storage medium of the pulse forming line, the geometric size of the pulse forming line is reduced, but its impedance is reduced. Relativistic Magnetron Mismatch

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • L-waveband double-injection double-frequency relativistic magnetron
  • L-waveband double-injection double-frequency relativistic magnetron
  • L-waveband double-injection double-frequency relativistic magnetron

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] figure 1 The resonant array of transversely segmented high-frequency structure proposed for the University of Michigan ( figure 1 (a) is a front view, figure 1 (b) is an oblique view). It is reported that under the condition of working voltage of 300kV and magnetic field of 0.14-0.23T, the maximum output peak power of the two ports is 32MW and 13MW respectively, and the corresponding frequencies are 1GHz and 2GHz.

[0016] Fig. 2 is a relativistic magnetron with an axially segmented high-frequency structure proposed by the present invention (Fig. 2(a) is a sectional view, and Fig. 2(b) is a schematic diagram of the overall structure). The magnetron includes two axially connected high-frequency systems. Both high-frequency systems include an anode outer sleeve, fan-shaped resonant cavities uniformly distributed along the circumference, and an interaction zone. The interaction zone of the two high-frequency systems It communicates through a cylindrical connection chann...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an L-waveband double-injection double-frequency relativistic magnetron, and belongs to the technical field of microwave sources in the high-power microwave technology. The magnetron comprises two high-frequency systems which are in axial communication, and the two high-frequency systems adopt single-port radial output. The magnetron meets the requirement for matching with alow-impedance high-power driving source; the geometrical size of the pulse forming line is reduced, and the whole high-power microwave system is miniaturized and compact. Meanwhile, based on the low-impedance high-power driving source, the single high-frequency system connected in the axial direction can still work under a high-impedance condition, so that influence to the electronic efficiency of the single high-frequency system caused by reduction of the geometric size of the pulse forming line is avoided.

Description

technical field [0001] The invention belongs to the technical field of microwave sources in high-power microwave technology, and specifically relates to an L-band double-injection double-frequency relativistic magnetron, which is based on an axially segmented high-frequency structure and radiates two rows of high-power microwaves with different frequencies. Background technique [0002] From the perspective of practical high-power microwave systems, the development of high-power microwave systems mainly focuses on four aspects: (1) Miniaturization and compactness of the system to improve power consumption ratio; (2) High repetition frequency work; (3) The frequency can be tuned; (4) Multi-frequency output. Since the birth of relativistic magnetron, it has been attracting much attention, and plans have been made to study it. The initial stage mainly focused on improving the output characteristics of a single relativistic magnetron, including obtaining the maximum peak and ave...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J25/593
Inventor 李天明何朝雄胡标汪海洋
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com