Method for improving first piece effect in plasma etching process

Abstract

The invention provides a method for improving a first piece effect in a plasma etching process. Data collection is carried out on the number of grains of the front batch of wafers through an advancedprocess control system, and the process parameters of a cleaning process are calculated according to the collected data to clean a reaction chamber; after the rear batch of wafers are subjected to plasma etching operation in the reaction chamber, the difference between the groove morphology of the first wafer in the rear batch and the target morphology is obtained through comparison, and a comparison result is fed back to the advanced process control system; and the advanced process control system judges whether the process parameters of the cleaning process need to be corrected or not, and ifso, the advanced process control system corrects the process parameters of the cleaning process, and the corrected process parameters are used for executing cleaning on the reaction chamber. By virtue of the method, the first piece effect of the subsequent batch wafers can be improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for improving the first chip effect in a plasma etching process. Background technique [0002] As the critical dimensions of integrated circuits continue to shrink, the integration requirements of microelectronic devices also continue to increase. For this reason, advanced plasma etching processes are introduced into the wafer manufacturing process. During the introduced plasma etching process, the reactive gas dissociates under the excitation of radio frequency current to generate active plasma, which reacts with the wafer to generate granular polymer, which is in the reaction chamber Residues formed in the reaction chamber and accumulated continuously in the reaction chamber. These residues cannot be removed by conventional post-cleaning processes, resulting in high particle counts and high defect rates, which compromise product quality. In o...

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Problems solved by technology

[0003] Usually, in order to ensure that subsequent batches of wafers do not produce defects, the existing cleaning process will clean the reaction chamber through a fixed cleaning time, but most of them will lead to excessive cleaning, making the reaction chamber too clean, and subsequent batches During the trench etching of the product, due to the excessive cleaning of the reaction chamber, the angle of the trench morphology of the first wafer of the subsequent batch of wafers after trench etching is too large, resulting in defects in the subsequent filling process. First Film Effect

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