Grinding method for wafer locating ring, wafer locating ring and application thereof and chemical-mechanical polishing device of wafer locating ring

A grinding method and positioning ring technology, which is applied to grinding devices, grinding machine tools, and other chemical processes, can solve the problems of being less than or equal to 0.01mm and poor flatness of wafer positioning rings, and achieve good flatness and flatness. The effect of good controllability of degree and condition

Inactive Publication Date: 2018-11-23
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF11 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] An object of the present invention is to provide a grinding method for a wafer positioning ring, so as to alleviate the technical problem that the wafer positioning ring in the prior art has poor flatness after turning and cannot meet the requirement of less than or equal to 0.01mm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grinding method for wafer locating ring, wafer locating ring and application thereof and chemical-mechanical polishing device of wafer locating ring
  • Grinding method for wafer locating ring, wafer locating ring and application thereof and chemical-mechanical polishing device of wafer locating ring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] A grinding method of a wafer positioning ring, comprising the steps of:

[0083] Fix the wafer positioning ring on the polishing head, place the polishing pad on the grinding disc, add the abrasive liquid for polishing, and apply pressure to the polishing head at the same time;

[0084] Wherein, the grinding speed is 53 rpm, the grinding time is 37 min, the flow rate of the grinding liquid is 0.7 mL / s, and the pressure is 4.3 kg.

Embodiment 2

[0086] A grinding method of a wafer positioning ring, comprising the steps of:

[0087] Fix the wafer positioning ring on the polishing head, place the polishing pad on the grinding disc, add the abrasive liquid for polishing, and apply pressure to the polishing head at the same time;

[0088] Wherein, the grinding speed is 80 rpm, the grinding time is 35 min, the flow rate of the grinding liquid is 0.7 mL / s, and the pressure is 4.8 kg.

Embodiment 3

[0090] A grinding method of a wafer positioning ring, comprising the steps of:

[0091] Fix the wafer positioning ring on the polishing head, place the polishing pad on the grinding disc, add the abrasive liquid for polishing, and apply pressure to the polishing head at the same time;

[0092] Among them, the grinding speed is 50rpm, the grinding time is 35min, the flow rate of the grinding liquid is 0.7mL / s, and the pressure is 4.3kg;

[0093] Grinding fluid comprises the following components by weight percentage:

[0094] Benzotriazole 1%, Sodium Lauryl Sulfate 12%, Aluminum Oxide 12% and Water 75%;

[0095] Among them, the particle size of alumina is 30mm;

[0096] Grinding disc comprises the following components by weight percentage:

[0097] Resin 60%, Atomized Iron Powder 35% and Cocoyl Ethanolamine 5%;

[0098] Wherein, the particle size of the grinding disc is 300 mesh.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a grinding method for a wafer locating ring, the wafer locating ring and application thereof and a chemical-mechanical polishing device of the wafer locating ring. The grindingmethod for the wafer locating ring comprises the following steps that the wafer locating ring is fixed to a polishing head, a polishing pad is placed on a grinding disc, grinding fluid is added for polishing, and meanwhile, pressure is applied to the polishing head; the grinding rotating speed is 50-80 rpm, the grinding time is 35-45 min, the grinding fluid flow rate is 0.7-1.2 mL/s, and the weight is 4.3-4.8 kg. The wafer locating ring obtained by the grinding method has better flatness and meets the requirement of less than or equal to 0.01mm.

Description

technical field [0001] The invention relates to the technical field of stainless steel grinding, in particular to a grinding method for a wafer positioning ring, a wafer positioning ring and its application, and a chemical mechanical polishing device. Background technique [0002] In the process of semiconductor processing, the initial polishing of semiconductor substrates used mechanical polishing, but the resulting damage to the wafer surface was extremely serious. Until the end of the 1960s, chemical mechanical polishing technology replaced mechanical polishing technology. Chemical mechanical polishing technology combines the advantages of chemical and mechanical polishing. It can obtain a relatively perfect surface and a high polishing rate. The flatness of the obtained wafer surface is two orders of magnitude higher than other methods. It is currently able to achieve global planarization. the only effective method. [0003] The chemical mechanical polishing device main...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B37/32B24B37/34C09K3/14
CPCB24B37/042B24B37/044B24B37/32B24B37/34C09K3/1409C09K3/1472
Inventor 姚力军潘杰王学泽李易磊
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap