Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Glass powder for semiconductor passivation packaging and preparation method of glass powder

A glass powder and semiconductor technology is applied in the field of glass powder for semiconductor passivation and encapsulation and its preparation, which can solve the problems of poor stability, poor protection effect, breakdown and the like, and achieve the effects of simple operation and cost saving.

Inactive Publication Date: 2018-11-23
张其峰
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surface of semiconductor devices needs to be protected. The traditional process is to vapor-deposit a layer of passivation film on the surface of semiconductor devices for protection. For semiconductor products with mesa structure, high voltage and high power, the film is protected by vapor deposition. Easy to be broken down by high voltage, poor stability and poor protection effect
At present, glass powder is used for surface passivation packaging of semiconductor devices. Glass powder has high reverse breakdown voltage, mechanical strength and thermal shock resistance, but the existing glass powder for semiconductor passivation packaging is not effective. Improve the weather resistance of passivation packaging materials, and cannot effectively resist comprehensive damage to the surface of semiconductor devices caused by light, cold and heat, wind and rain, bacteria, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Glass powder for semiconductor passivation packaging and preparation method of glass powder
  • Glass powder for semiconductor passivation packaging and preparation method of glass powder
  • Glass powder for semiconductor passivation packaging and preparation method of glass powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A glass powder for semiconductor passivation and packaging. The composition in percent by mass is shown in Table 1.

[0022] Table 1 Example 1 Composition Table

[0023] Component

SiO 2

Al 2 O 3

B 2 O 3

PbO

content(%)

45

5

10

40

[0024] The preparation method of the glass powder includes the following steps:

[0025] 1) Calculate SiO according to the mass percentage of the components shown in Table 1. 2 , Al 2 O 3 , B 2 O 3 And the mass of PbO, after weighing the SiO 2 , Al 2 O 3 , B 2 O 3 Mix well with PbO to obtain a mixture of glass powder formula components;

[0026] 2) Put the mixture obtained in step 1) into a platinum crucible or alumina, heat it in a high-temperature resistance furnace, and smelt it into a uniform glass at 1250°C;

[0027] 3) Rolling the molten glass obtained in step 2) into 0.5mm thick shards through a heat-resistant stainless steel water-cooled continuous rolling mill;

[0028] 4) The smashed glass flakes obtained in step 3) are added to the coru...

Embodiment 2

[0030] A glass powder for semiconductor passivation and packaging. The composition in percent by mass is shown in Table 2.

[0031] Table 2 Example 2 Composition Table

[0032]

[0033] The preparation method of the glass powder includes the following steps:

[0034] 1) Calculate SiO according to the mass percentage of the components shown in Table 1. 2 , Al 2 O 3 , B 2 O 3 , PbO, Bi 2 O 3 , ZnO, CeO 2 , Sb 2 O 3 , PbF 2 , V 2 O 5 , ZrO 2 And TiO 2 After weighing, the components are fully mixed uniformly to obtain a mixture of glass powder formula components;

[0035] 2) Put the mixture obtained in step 1) into a platinum crucible or alumina, heat it in a high-temperature resistance furnace, and smelt it into a uniform molten glass at 1260°C;

[0036] 3) Rolling the molten glass obtained in step 2) into 0.5mm thick shards through a heat-resistant stainless steel water-cooled continuous rolling mill;

[0037] 4) The smashed glass flakes obtained in step 3) are added to the corundum tank b...

Embodiment 3

[0039] A glass powder for semiconductor passivation encapsulation. The composition in percent by mass is shown in Table 3.

[0040] Table 3 Example 3 component table

[0041]

[0042] The preparation method of the glass powder includes the following steps:

[0043] 1) Calculate SiO according to the mass percentage of the components shown in Table 1. 2 , Al 2 O 3 , B 2 O 3 , PbO, Bi 2 O 3 , ZnO, CeO 2 , Sb 2 O 3 , PbF 2 , V 2 O 5 , ZrO 2 And TiO 2 After weighing, the components are fully mixed uniformly to obtain a mixture of glass powder formula components;

[0044] 2) Add the mixture obtained in step 1) into a platinum crucible or alumina, heat it in a high-temperature resistance furnace, and smelt it into a uniform molten glass at 1280°C;

[0045] 3) Rolling the molten glass obtained in step 2) into 0.5mm thick shards through a heat-resistant stainless steel water-cooled continuous rolling mill;

[0046] 4) The smashed glass flakes obtained in step 3) are added to the corundum tank bal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Softening point temperatureaaaaaaaaaa
Login to View More

Abstract

The invention provides glass powder for semiconductor passivation packaging and a preparation method of the glass powder. The glass powder is prepared from the following ingredients in percentage by mass: 30-60% of SiO2, 3-10% of Al2O3, 5-15% of B2O3, 28-55% of PbO, 0-10% of Bi2O3, 0-20% of ZnO, 0-2% of CeO2, 0-2% of Sb2O3, 0-3% of PbF2, 0-5% of V2O5, 0-0.5% of ZrO2 and 0-5% of TiO2. According tothe preparation method of the glass powder for the semiconductor passivation packaging, the operation is simple, the cost can be effectively saved, the prepared glass powder can meet requirement on the semiconductor passivation packaging, meanwhile, the glass powder has enough strength and breaking tenacity and can effectively resist comprehensive damage caused by illumination, cold, heat, wind, rain, bacteria and the like to the surface of a semiconductor device.

Description

Technical field [0001] The invention belongs to the technical field of glass materials, and in particular relates to a glass powder for semiconductor passivation packaging and a preparation method thereof. Background technique [0002] The surface of the semiconductor device is sensitive and easily affected by the surrounding environment, changing its electrical performance and stability, thereby affecting its performance. With the development of semiconductor technology, more and more attention has been paid to the surface treatment of electronic and semiconductor devices. The surface of semiconductor devices needs to be protected. The traditional process is to vapor-deposit a passivation film on the surface of the semiconductor device for protection. For mesa, high-voltage, high-power semiconductor products, use vapor-deposited film to protect Easy to be broken down by high voltage, poor stability and poor protection effect. At present, glass powder is used in the surface pas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C12/00
CPCC03C12/00
Inventor 张其峰
Owner 张其峰
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com