Substrate, semiconductor device and substrate manufacturing method

A production method and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult etching and pattern production, and achieve the effects of convenient testing methods, guaranteed etching accuracy, and simple requirements

Active Publication Date: 2018-11-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the stable chemical and physical properties of sapphire, it is difficult to etch and pattern

Method used

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  • Substrate, semiconductor device and substrate manufacturing method
  • Substrate, semiconductor device and substrate manufacturing method

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Embodiment Construction

[0035] The embodiment of the present application discloses a substrate, including a sapphire substrate and a patterned AlN thin film formed on the sapphire substrate.

[0036] Preferably, the thickness of the AlN thin film is 3-15 μm.

[0037] The application also discloses a semiconductor device, including the substrate and an epitaxial layer formed on the substrate.

[0038] In this technical solution, the semiconductor device is preferably a III-V LED device. In some embodiments, the semiconductor device may also be other AlN-based devices such as surface acoustic wave devices, high-frequency high-power devices, and the like.

[0039] The present application also discloses a method for manufacturing a substrate. First, the mask material is evaporated, and then the mask is etched by dry method, and AlN is etched by wet method, and finally the mask material is removed, thereby forming a patterned AlN film. method, using this method, a patterned AlN film on an AlN / sapphire t...

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Abstract

A substrate including a sapphire substrate and a patterned AlN film formed on the sapphire substrate, a semiconductor device and a substrate manufacturing method are disclosed. The semiconductor device includes the substrate and an epitaxial layer formed on the substrate. The preparation method of the substrate comprises the following steps: firstly evaporating a mask material; secondly dry-etching the mask; thirdly wet-etching the AlN; and finally removing the mask material to form a patterned AlN film. According to the invention, a patterned AlN film can be prepared on the AlN / sapphire template by using a conventional process. Dry etching and wet etching are combined to ensure both etching accuracy and etching rate. Requirements for the preparation process are very simple, and the test method is convenient. In the invention, periodic patterns on an AlN film are prepared through etching AlN on the AlN / sapphire template, thereby achieving the purpose of improving crystal growth qualityand device efficiency.

Description

technical field [0001] The present application belongs to the technical field of semiconductors, and in particular relates to a substrate, a semiconductor device and a substrate manufacturing method. Background technique [0002] AlN is one of the semiconductors with the widest band gap among III-V semiconductor materials. The band gap at room temperature is about 6.2eV. It is a direct band gap semiconductor material, and the emission wavelength of the inter-band transition corresponds to the deep ultraviolet band; AlN has good Chemical stability, high thermal conductivity, thermal stability, good dielectric properties, and good physical properties, such as high breakdown field strength, high thermal conductivity, fast electron saturation drift, etc., in deep ultraviolet LED, ultraviolet LD, surface acoustic wave devices and high-frequency high-power devices have good application prospects. Although the research on AlN-based devices has made some progress in recent years, t...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/22
CPCH01L33/0066H01L33/0075H01L33/22
Inventor 李雪威张纪才王建峰徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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