52results about How to "The preparation process requires simple" patented technology

The invention discloses a method for making a super-high temperature resistant ceramic coating. The method adopts organic polymer as adhesive and mixed powder consisting of high melting metal powder, B powder, C powder and Si powder as raw materials; moreover, through adopting processes such as preparing slurry used in a coating, slurry coating, precoating curing, high-temperature reaction sintering, a super-high temperature resistant ceramic coating is finally made on the surface of a ceramic matrix composite material. The coating making process is simple and has low cost; the made coating has ideal bonding performance with a substrate and has excellent ablation resistance and antioxidation, thereby laying the foundation for the application of a ceramic matrix composite material in the super-high temperature resistant and antioxidation fields.

The invention relates to a preparing method of a metal carrier catalyst coating, wherein, the metal carrier catalyst coating which has an alloy metal high temperature treated as a substrate firstly loads a first layer alumina sol AlOOH, after drying loads a second layer Al2O3 paste, then drying and calcining to obtain a firmly coating; or loads mixed paste comprised by Al2O3 and the other metal oxide required by reaction on the dried AlOOH coat to obtain a catalyst active coat after drying and calcining; or an active coating for especial reaction is obtained by further loading paste which is the other metal oxide required by reaction on the second Al2O3 paste coat, and then drying and calcining. Then the active components are loaded on the obtained catalyst coating, after drying and calcining to prepare the metal carrier catalyst. The coating and the metal carrier of the invention are combined firmly. The invention can prepare the composite coating metal carrier catalyst based on different reaction requirement and the process and device for preparing is simple.

A large acreage thermolysis structure used in the high-power semiconductor device belongs to the field of preparing the high-power semiconductor device. It adopts the hyperbatic welding method, joints the die with the heat sink with high thermal conductivity through the heat conducting insulation film and also can add heat sink to the substrate of the hyperbatic welding chips to form the double ended thermolysis structure. The invention makes the heat source of the device and the metal salient points form the thermolysis thoroughfare through the heat conducting insulation film in the front of the device, can reduce the thermal resistance of the device to extremely low level, thus avoids the effect of self healing when working in heavy duty and increases the stability and reliability of the device. In addition, the method disclosed by the invention is featured by simple technique and low cost and is adaptable to mass production.

The invention relates to a halogen-free flame-retardant phenolic epoxy glass cloth laminate and a preparation method thereof, and the laminate comprises alkali-free glass cloth and matrix resin; wherein the matrix resin comprises the following components: 24 wt%-36 wt% of epoxy resin, 16 wt%-24 wt% of phenolic resin, 5 wt%-10 wt% of aromatic amine curing agents, and 40 wt%-45 wt% of halogen-free phosphorus-containing nitrogen-containing fire retardants. The preparation method comprises the following steps: preparing the halogen-free phosphorus-containing nitrogen-containing fire retardant by Michael addition, proportionally mixing the components of the matrix resin, and performing dipping and hot-pressing of the alkali-free glass cloth to obtain the product. The composite material of the invention has a vertical combustion level of up to UL94 V-0 grade, has excellent flame retardant effect, good electrical and mechanical properties, and is applicable to printed circuit boards and other related electronic and electrical insulating materials or structural materials; the invention has a simple preparation process, low cost, convenient operations, and simple preparation process requirements, and facilitates the realization of industrial production.

The present invention discloses a novel SiO2/TiO2 photocatalytic composite powder preparation method, which comprises: adopting elemental silicon powder as a main reactant and adopting sodium silicate and ammonia water as catalysts to react under a hydrothermal condition, and carrying out cooling and suction filtration to prepare a nanometer SiO2 sol A; adopting the nanometer SiO2 sols with different concentrations as dispersing liquids and adopting sodium hexametaphosphate (SHMP) and sodium dodecyl sulfate (SDS) as dispersing agents to treat nanometer TiO2 powder for a certain time at a certain ultrasonic power and a certain frequency to obtain a uniformly-distributed composite pre-dispersing liquid; and carrying out water bath evaporation on the pre-dispersing liquid under a stirring condition, drying, compounding the nanometer TiO2 particles and the nanometer SiO2 particles during a foaming process, and finally carrying out calcination grinding to obtain the TiO2/SiO2 photocatalytic composite powder. According to the present invention, the preparation process is simple and easy to perform, the preparation period is short, and the obtained SiO2/TiO2 photocatalytic composite powder has characteristics of particle size of 0.1-3 [mu]m, high purity, and high yield.

The invention relates to a method for loading a coating on sponge metal and a sponge metal carrier coating prepared by the same. The method performs gradual transition through surface pretreatment, oxidation treatment, alumina sol loading, drying, aluminum oxide slurry loading and drying and baking processes, thereby preparing a sponge metal carrier coating in firm combination; the coating has high firmness, and the preparation technology is simple; and one or several metal oxides or salts can be loaded as necessary, and the coating is a catalyst carrier coating which can be applied to catalytic reaction. The invention also relates to a method for loading a catalyst on sponge metal and a catalyst prepared by the same; and an iron-chromium-aluminum sponge metal carrier catalyst can be prepared by loading precious metal active components on the carrier coating.

Disclosed is a technology for cleanly and efficiently processing lead-bearing waste residues. The lead-bearing waste residues produced by lead smelting and lime are matched according to the mass ratioof 1:0.03-0.07 and are then pressed into blocky lead-bearing residue blocks, and after natural drying, by mass, 7%-15% of coke, 9%-11% of silica and 74%-84% of the lead-bearing residue blocks are matched. Materials are sequentially added into a five-section integrated type smelting furnace, ignition blowing-in is conducted for oxygen-enriched intensified smelting, materials added from a smeltingfurnace feeding section (1) pass through a preheating section (2), a sintering section (3), a half-melting section (4), a smelting section (5) and a layering section (6), and the smelting process of the materials is completed. Through the technology, material preheating, sintering, smelting and clarification laying are integrated, heavy metal, valuable metal, gangue and the like are selectively separated well, dangerous waste is processed cleanly and efficiently, and the technology has the advantages that the process is short, operation is simple and convenient, and investment is small.

The embodiment of the invention discloses an array substrate, a display panel and a display device, wherein the array substrate comprises a substrate base plate; a scanning wire and a data wire, which are formed on the substrate base plate, wherein the scanning wire and the data wire are crossed to define a plurality of pixel units, and the pixel units are provided with pixel electrodes electrically connected with the data wire; a plurality of touch electrodes, a plurality of touch walking wires and a span structure; the touch walking wires are electrically connected with one corresponding touch electrode through the span structure; along the extending direction of the scanning wire, the distance between adjacent two first pixel electrodes is more than the distance between the adjacent first pixel electrode and the second pixel electrode, and more than or equal to the distance between two second pixel electrodes. In conclusion, the distance between the pixel electrode and the span structure is big, the technique requirement is simple, and the production cost can be reduced.

A process for making a brick comprises the steps of prearranging at least one pair of half-shells (3a, 3b) and fixing said half-shells (3a, 3b) to each other to define a main body (2) of the brick with a cavity {4} therein. The process further comprises the step of introducing a preset quantity of argon into said cavity (4), A brick comprises a pair of half-shells (3a, 3b) fixed to each other to define a main body (2) of said brick (1); said main body (2) exhibits an inner cavity (4); said cavity (4) holds a preset quantity of argon.

A substrate including a sapphire substrate and a patterned AlN film formed on the sapphire substrate, a semiconductor device and a substrate manufacturing method are disclosed. The semiconductor device includes the substrate and an epitaxial layer formed on the substrate. The preparation method of the substrate comprises the following steps: firstly evaporating a mask material; secondly dry-etching the mask; thirdly wet-etching the AlN; and finally removing the mask material to form a patterned AlN film. According to the invention, a patterned AlN film can be prepared on the AlN/sapphire template by using a conventional process. Dry etching and wet etching are combined to ensure both etching accuracy and etching rate. Requirements for the preparation process are very simple, and the test method is convenient. In the invention, periodic patterns on an AlN film are prepared through etching AlN on the AlN/sapphire template, thereby achieving the purpose of improving crystal growth qualityand device efficiency.

The invention provides a detachable battery door lock mechanism and a waterproof X-ray digital flat panel detector. The detachable battery door lock mechanism comprises a lock tongue device, an elastic device and a rotation device, wherein the elastic device is in contact with the lock tongue device and is used for applying a reverse elastic force onto the lock tongue device to make the lock tongue device automatically returned and lock a detachable battery when the assembly of the detachable battery is completed, and the rotation device is connected with the lock tongue device and used for driving the lock tongue device to inwards contract and pressing the elastic device to release the detachable battery when the detachable battery is disassembled. The detachable battery door lock mechanism provided by the invention is simple in structure, is convenient to operate and has favorable maintainability, and the detachable battery can be rapidly disassembled and can be automatically protected; moreover, the fabrication process is simple in requirement, and the production efficiency and the practicability of the detector are improved; and meanwhile, the detachable battery door lock mechanism provided by the invention has relatively high water prevention performance.

The invention discloses a device for efficiently treating domestic sewage by utilizing ozone. The device comprises an aeration chamber and a main reaction chamber; an aeration device is arranged in the aeration chamber, an ozone gas generating device is arranged on the outer side of the aeration chamber, the ozone gas generating device is connected with the aeration device through an ozone conveying pipe, and a first exhaust pipeline and an exhaust safety valve are arranged on the aeration chamber; a bracket is arranged in the main reaction chamber, a sieve plate is arranged on the bracket, reaction promoting filler is stacked on the sieve plate, and a second exhaust pipeline and a gas-liquid separation device are arranged on the main reaction chamber; a U-shaped pipeline is arranged between the aeration chamber and the main reaction chamber, and an ultraviolet irradiation device is arranged on the U-shaped pipeline; a lower pipeline is arranged between the aeration chamber and the lower side of the main reaction chamber and is provided with a water pump, a water inlet branch pipe, a water outlet branch pipe, a water inlet valve and a water outlet valve. The device has the advantages of long contact time of ozone and sewage, high utilization rate, simple manufacturing requirement of the whole equipment, lower cost, lower energy consumption and higher treatment rate.