Large-area heat sink structure for large power semiconductor device

A technology with a heat dissipation structure and a large area, which is used in semiconductor devices, semiconductor/solid-state device components, and electric solid-state devices to achieve the effects of reducing chip thermal resistance, low cost, and short heat flow paths.

Inactive Publication Date: 2005-03-23
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The present invention is completed to solve the heat dissipation problem of high-power semiconductor devices with materials with poor thermal conductivity such as sapphire as the substrate, and to avoid the disadvanta

Method used

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  • Large-area heat sink structure for large power semiconductor device
  • Large-area heat sink structure for large power semiconductor device
  • Large-area heat sink structure for large power semiconductor device

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0037] Example 1

[0038] The structure of the sapphire substrate AlGaN / GaN HEMT large-area flip-chip welding chip disclosed in the present invention is as figure 2 Shown: 1 is a sapphire substrate, 2 is an epitaxial layer, on which AlGaN / GaN HEMT devices are fabricated, 3 is the source pad of the device, 4 is the gate electrode, 5 is the drain pad, and 9 is the copper bump Point 10 is a lead-tin solder joint, 11 and 12 are gold and copper pads on the Si-based heat sink 13, 7 is the heat sink electrode, and 14 is a silicon nitride thermally conductive insulating film. During the chip manufacturing process, HEMT devices are made by conventional technology; then the silicon nitride thermally conductive insulating film is deposited on the front of the chip by plasma enhanced chemical vapor deposition (PECVD); then the electrode lead-out holes are opened on the thermally conductive insulating film to make adhesion Layer and flip-chip solder bumps; At the same time, a similar process ...

Example Embodiment

[0041] Example 2

[0042] The structure of the sapphire substrate AlGaN / GaN HEMT large-area flip-chip welding chip disclosed in the present invention is as Figure 6 Shown: 1 is a sapphire substrate, 2 is an epitaxial layer, on which AlGaN / GaN HEMT devices are fabricated, 3, 4, and 5 are the source pads, gate electrodes, and drain pads of the device, and 9 is copper For the bumps, 14 is a silicon nitride thermally conductive insulating film, 81 is a heat sink under Si base, and 82 is a heat sink on Si base. The manufacturing process of the device is basically the same as that of Embodiment 1, except that the substrate is thinned, and a heat sink is installed on one side of the substrate to form a double-sided heat dissipation structure, which further reduces the thermal resistance of the chip. Experiments have proved that the flip-chip AlGaN / GaN HEMT chip with the double-sided heat dissipation structure produced in this example is compared with the conventional flip-chip HEMT chip,...

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Abstract

A large acreage thermolysis structure used in the high-power semiconductor device belongs to the field of preparing the high-power semiconductor device. It adopts the hyperbatic welding method, joints the die with the heat sink with high thermal conductivity through the heat conducting insulation film and also can add heat sink to the substrate of the hyperbatic welding chips to form the double ended thermolysis structure. The invention makes the heat source of the device and the metal salient points form the thermolysis thoroughfare through the heat conducting insulation film in the front of the device, can reduce the thermal resistance of the device to extremely low level, thus avoids the effect of self healing when working in heavy duty and increases the stability and reliability of the device. In addition, the method disclosed by the invention is featured by simple technique and low cost and is adaptable to mass production.

Description

technical field [0001] The invention relates to a large-area heat dissipation structure for high-power semiconductor devices. The purpose is to avoid the disadvantages caused by the temperature rise of the semiconductor device due to poor heat conduction of the substrate when the semiconductor device is working at high power, thereby improving the stability and reliability of the device. reliability. Moreover, the manufacturing process is simple and the cost is low. The invention belongs to the technical field of manufacturing high-power semiconductor devices. Background technique [0002] With the continuous improvement of semiconductor device manufacturing technology, various performance indicators of semiconductor devices are also continuously improved. Electronic devices based on traditional silicon (Si), gallium arsenide (GaAs) or indium phosphide (InP)-based semiconductor materials have achieved excellent high-frequency characteristics, but due to the narrow band gap...

Claims

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Application Information

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IPC IPC(8): H01L23/34
CPCH01L2224/73253
Inventor 罗毅郝智彪唐广
Owner TSINGHUA UNIV
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