Substrate, semiconductor device and substrate manufacturing method

Abstract

The application discloses a substrate, a semiconductor device and a manufacturing method of the substrate. The substrate includes a sapphire substrate and a patterned AlN thin film formed on the sapphire substrate. The semiconductor device includes the substrate and an epitaxial layer formed on the substrate. The manufacturing method of the substrate includes: first evaporating mask material, then performing dry etching mask, then etching AlN by wet method, and finally removing mask material to form a patterned AlN thin film. In the present invention, a patterned AlN thin film can be prepared on an AlN / sapphire template by using a conventional process. The combination of dry etching and wet etching is used to ensure both etching accuracy and etching rate. The requirement for the preparation process is very simple, and the testing method is convenient. The invention uses AlN / sapphire template to etch AlN to prepare periodic patterns on the AlN thin film, so as to achieve the purpose of improving crystal growth quality and improving device efficiency.

Description

technical field [0001] The present application belongs to the technical field of semiconductors, and in particular relates to a substrate, a semiconductor device and a substrate manufacturing method. Background technique [0002] AlN is one of the semiconductors with the widest band gap among III-V semiconductor materials. The band gap at room temperature is about 6.2eV. It is a direct band gap semiconductor material, and the emission wavelength of the inter-band transition corresponds to the deep ultraviolet band; AlN has good Chemical stability, high thermal conductivity, thermal stability, good dielectric properties, and good physical properties, such as high breakdown field strength, high thermal conductivity, fast electron saturation drift, etc., in deep ultraviolet LED, ultraviolet LD, surface acoustic wave devices and high-frequency high-power devices have good application prospects. Although the research on AlN-based devices has made some progress in recent years, t...

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Problems solved by technology

[0004] However, due to the stable chemical and physical properties of sapphire, it is difficult to etch and pattern

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