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Quantum dot light-emitting diode and application thereof

A quantum dot light-emitting and diode technology, which is applied in the manufacture of electrical components, electric solid devices, semiconductor/solid-state devices, etc., can solve problems such as the performance of quantum dot light-emitting diodes to be improved, reduce leakage current, reduce defects, and improve cost performance. The effect of membrane quality

Active Publication Date: 2018-12-07
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the device performance of quantum dot light-emitting diodes still needs to be improved.

Method used

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  • Quantum dot light-emitting diode and application thereof
  • Quantum dot light-emitting diode and application thereof
  • Quantum dot light-emitting diode and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0026] In this embodiment, a quantum dot light emitting diode has a structure such as figure 1 As shown, it includes a substrate (including the first electrode ITO), a hole injection layer (PEODT:PSS) laminated on the substrate, a hole transport layer (poly-TPD) laminated on the surface of the hole injection layer, and a hole injection layer (poly-TPD) laminated on the surface of the hole. The quantum dot luminescent layer (CdSe / ZnS) on the surface of the hole transport layer, the electron transport layer (TiO 2 : PDI-Py), and the second electrode (Al) disposed on the electron transport layer.

[0027] The material of the electron transport layer includes TiO with a diameter of 3 to 5 nm in a mass ratio of 100:5 2 Nanoparticles and peryleneimide derivatives (PDI-Py, see formula 1 for the structure).

[0028]

[0029] The preparation method of the above-mentioned quantum dot light-emitting diode is as follows:

[0030] (1) Substrate cleaning: The glass substrate with 150n...

Embodiment 2

[0039] This embodiment is a kind of quantum dot light-emitting diode, its raw material and production method are similar to Embodiment 1, the difference is that: the material of the electron transport layer includes HfO with a diameter of 3 to 5 nm and a weight ratio of 100:5. 2 Nanoparticles and peryleneimide derivatives (see formula 2 for the structure).

[0040]

Embodiment 3

[0042] This embodiment is a kind of quantum dot light-emitting diode, its raw material and production method are similar to Embodiment 1, the difference is that: the material of the electron transport layer includes TiO with a diameter of 3 to 5 nm in a weight ratio of 100:1. 2 Nanoparticles and peryleneimide derivatives (see formula 1 for the structure).

[0043]

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Abstract

The present invention relates to a quantum dot light-emitting diode and an application thereof. The quantum dot light-emitting diode comprises an electron transfer layer. The materials of the electrontransfer layer comprise metallic oxide particles with a mass ratio from 100:1 to 100:50 and perylene bisimide derivative. The quantum dot light-emitting diode can achieve continuous regulation of theelectronic mobility, can reduce the defects caused by gathering part of the metallic oxide particles and improve the film formation quality of the electron transfer layer so as to reduce the leakagecurrent of the device and integrally improve the QLED device performances.

Description

technical field [0001] The invention relates to a light-emitting device, in particular to a quantum dot light-emitting diode and its application. Background technique [0002] Quantum dot light-emitting diode (QLED) refers to a type of light-emitting diode with quantum dot materials as the light-emitting layer. Ink printing) and other advantages have broad application prospects in large-area display and have attracted widespread attention. [0003] However, during the synthesis process of quantum dot materials, there will be many dangling bonds and surface defect states on the surface, resulting in poor photostability. Therefore, the quantum dot materials used in quantum dot light-emitting diodes are generally passivated by growing a wide-bandgap inorganic semiconductor shell on the outer layer of the quantum dot core or adding organic ligands such as surfactants to the surface to improve its quantum performance. efficiency and photostability. At present, Cd-based II-VI q...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/654H10K85/6572H10K50/115H10K50/165
Inventor 余磊
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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