Unlock instant, AI-driven research and patent intelligence for your innovation.

In-situ silver/stannic oxide/bismuth oxybromide photoelectric material synthesis method

A bismuth oxybromide, in situ synthesis technology, applied in the direction of tin oxide, chemical instruments and methods, bismuth compounds, etc., can solve the problems of low photogenerated charge separation efficiency and poor photoelectric performance, and achieve good charge separation efficiency and good crystallization degree, the effect of improving utilization efficiency

Inactive Publication Date: 2018-12-11
HEILONGJIANG UNIV
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of low photoelectric charge separation efficiency and poor photoelectric performance in the bismuth oxybromide photoelectric material prepared by the existing method, and provide a method for in-situ synthesis of silver / tin oxide / bismuth oxybromide photoelectric material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • In-situ silver/stannic oxide/bismuth oxybromide photoelectric material synthesis method
  • In-situ silver/stannic oxide/bismuth oxybromide photoelectric material synthesis method
  • In-situ silver/stannic oxide/bismuth oxybromide photoelectric material synthesis method

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0033] Specific Embodiment One: This embodiment is a method for in-situ synthesis of silver / tin oxide / bismuth oxybromide optoelectronic material, which is completed according to the following steps:

[0034] 1. Prepare a mixed solution of bismuth salt and stannate: dissolve the bismuth salt into deionized water at a temperature of 25-35°C and a stirring speed of 100-300r / min, then add stannate, and then Stirring under the conditions of 25-35°C and a stirring speed of 100-300r / min until the stannate is dissolved in deionized water to obtain a mixed solution of bismuth salt and stannate;

[0035] The amount of substance of the bismuth salt described in step 1 is (1~3) mol:2500mL with the volume ratio of deionized water;

[0036] The molar ratio of bismuth salt and stannate described in step 1 is (1~3):(0.01~0.05);

[0037] 2. Preparation of bromine salt solution: Dissolve bromine salt in deionized water at a temperature of 25-35°C and a stirring speed of 100-300r / min to obtain ...

specific Embodiment approach 2

[0049] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the bismuth salt described in step 1 is one or a mixture of bismuth nitrate, bismuth chloride and bismuth sulfate. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0050] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the stannate described in step 1 is stannous chloride dihydrate, sodium stannate trihydrate or crystalline tin tetrachloride. Other steps are the same as those in Embodiment 1 or 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses an in-situ silver / stannic oxide / bismuth oxybromide photoelectric material synthesis method and relates to a bismuth oxybromide photoelectric material preparation method. The synthesis method disclosed by the invention aims at solving the problems that a bismuth oxybromide photoelectric material prepared by an existing method has low photo-induced charge separation efficiency and poor photoelectric property. The method comprises the steps: 1, preparing a mixed solution of bismuth salt and stannate; 2, preparing a bromine salt solution; 3, preparing a precursor; 4, performing hydrothermal reaction on the precursor to obtain a silver / stannic oxide / bismuth oxybromide photoelectric material. The photovoltaic response strength of the silver / stannic oxide / bismuth oxybromide photoelectric material prepared by the synthesizing method disclosed by the invention can reach 16.62mV, and the silver / stannic oxide / bismuth oxybromide photoelectric material has the advantages ofstronger photovoltaic response, better charge separation efficiency and better photovoltaic characteristic. The synthesis method disclosed by the invention is applied to preparation of the silver / stannic oxide / bismuth oxybromide photoelectric material.

Description

technical field [0001] The invention relates to a preparation method of a bismuth oxybromide photoelectric material. Background technique [0002] my country has abundant reserves of bismuth resources, and the research prospects for the development of bismuth-based materials are broad. Bismuth-based materials have unique electronic structure, optical and electrical properties, stable chemical properties, cheap and safe, and because of their good physical and chemical properties, they are widely used in photoelectric conversion and military industry. Therefore, there is great potential for research on the photoelectric properties of bismuth-based materials. [0003] Among bismuth-based materials, BiOBr is relatively easy to synthesize, has controllable energy band, visible light response and stable chemical properties. It is a highly anisotropic narrow-band semiconductor. Its unique [BiOBr 2 o 2 ] in a two-dimensional layered structure alternately arranged with dihalogens,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G29/00C01G19/02B22F9/24
CPCB22F9/24C01G19/02C01G29/00C01P2004/80
Inventor 井立强王皓曲阳陈双影李志君
Owner HEILONGJIANG UNIV