A method for controllinga floating gate tip of a flash memory
A floating gate, cutting-edge technology, applied in the field of controlling the flash memory floating gate tip, can solve the problems affecting the performance of flash memory, the voltage affecting the coupling of the floating gate, etc., to achieve the effect of optimal performance and increased performance
Active Publication Date: 2018-12-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0004] In the flash memory structure, the height of the tip of the floating gate will affect the coupling voltage of the floating gate during programming and erasing, thus affecting the performance of the flash memory during programming and erasing
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[0028] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0029] The present invention provides a method for controlling the tip of the flash memory floating gate, referring to figure 1 , methods for controlling the tip of the flash memory floating gate include:
[0030] S11: providing a substrate;
[0031] S12: sequentially forming a gate oxide layer, a floating gate layer, and a floating gate mask layer on the substrate;
[0032] S13: Etching the floating gate mask layer to form an opening, the opening exposes the floating gate layer to form a first sidewall, and t...
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The invention provides a method for controlling a floating gate tip of a flash memory, comprising the steps of: providing a substrate; Forming a floating gate layer, a gate oxide layer and a floatinggate mask layer on the substrate; Etching the floating gate mask layer to form an opening and forming a first sidewall having a slope; Etching the floating gate layer to form a trench, depositing oxide at the opening and the trench to form an oxide layer; The etched oxide layer forms a second sidewall which forms a joint surface with a side surface of the first sidewall, the slope of the inclinedsurface of the second sidewall is the same as the slope of the side surface of the first sidewall, and the inclined surface of the second sidewall or the dimension difference between the upper and lower sides of the side surface of the first sidewall is measured; Etching the remaining floating gate layer and the gate oxide layer, and depositing an oxide to etch the oxide to form a third sidewall;Removing a floating gate mask layer; According to the size difference, different time is selected to process the inclined surface of the second sidewall. Finally, the height of the floating gate tip is controlled within a predetermined range, thereby maintaining the performance of the device.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for controlling the tip of a floating gate of a flash memory. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability, and flash memory is widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers, and U disks. [0003] As a non-volatile memory, flash memory works by changing the critical voltage of the transistor or memory cell to control the switch of the gate channel to achieve the purpose of storing data, so that the data stored in the memory will not be affected by power terminals. And disappeared, and flash memory is a special structure of electrically erasable and programmable read-only memory. Today, flash memory has occupied most of the market share of non-volatile semiconductor memory, becomin...
Claims
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Login to View More IPC IPC(8): H01L27/11521H01L21/28
CPCH01L29/401H10B41/30
Inventor 高学杜天伦韩国庆徐涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP