Monolithic integrated surface-emitting semiconductor laser based on metasurface and its preparation method

Abstract

The invention discloses a monolithic integrated surface emitting semiconductor laser based on a super surface micro-nano structure. A super-surface micro-nano structure is combined with the active medium of semiconductor laser, the cluster coherent oscillation of the resonant unit inside the super-surface can be excited when the active material emits light in the active region. This local oscillation has high optical field binding ability and can provide positive feedback for the active layer to realize lasing. At the same time, by optimizing the structure of the super-surface micro-nano, we can control the far-field distribution characteristics of the beam, such as directional angle, phase, polarization, mode and so on. The laser structure comprises a substrate, a low refractive index layer, an active layer and a super-surface micro-nano structure. The preparation method comprises design and preparation of a light field confinement layer, a gain medium and the super-surface structure.Through the invention, the light field can be strongly localized in the near field, the far field distribution can be regulated by the arrangement mode of the structural unit, and the light field canbe directly regulated.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, and more specifically relates to a monolithic integrated vertical surface emitting semiconductor laser based on a metasurface microstructure and a preparation method thereof. Background technique [0002] Semiconductor lasers have a wide range of operating wavelengths, small size, mature processing and preparation technology, stable device performance, diverse applications, and low prices. They are widely used in optical communications, optical discs, laser printing, laser scanning and other fields, and have huge application requirements. Moreover, it can be pumped to emit light by means of electrical injection through a simple electrode structure, and the operating voltage and current of electrical injection are compatible with integrated circuits, and can be monolithically integrated with electrical devices and systems. Its modulation rate can reach GHz level, and it is widely used in optica...

AI Technical Summary

Problems solved by technology

[0005] For the above defects or improvement needs of the prior art, the present invention provides a metasurface-based monolithic integrated surface-emitting semiconductor laser and its preparation method, thereby solving the problem of traditional surface-emitting semiconductor lasers (such as vertical cavity surface-emitting lasers) It is necessary to grow the upper and lower distributed Bragg reflector layers, and the preparation process is complex, the lasing threshold is large, and the technical problems of the output beam form are single

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