Semiconductor film thermal conductivity analysis method based on Raman spectrum testing technique
A testing technology, Raman spectroscopy technology, applied in the field of semiconductor thin film testing, can solve the problems of poor economy, insufficient precision of thermal conductivity characterization and analysis of semiconductor micro-nano thin films, etc. Effect
Active Publication Date: 2018-12-21
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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[0004] The purpose of the present invention is to provide a method for analyzing the thermal conductivity of semiconductor thin films based on Raman spectroscopy testing technology, which overcomes the problems of insufficient precision and poor economy in the characterization and analysis of thermal conductivity of semiconductor micro-nano thin films in the existing testing technology. The micro-bridge thermal structure of the electrode is designed to meet the combination of Raman test and simulation fitting analysis, and realize the accurate characterization of the thermal conductivity of micro-nano-scale thin films.
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[0040] For the thermal conductivity analysis of the semiconductor gallium nitride film, the thickness of the GaN film is 1.2um, and the substrate is SiC material.
[0041] ①Design the microbridge structure of the sample test area of the film to be tested, and prepare the sample based on photolithography, evaporation, and plasma etching techniques: design strip electrodes on the GaN film in the test area, with a width of 5um and a thickness of 100nm. The length is 500um; the size of the circuit connection area at both ends of the linear heat source is 150um*150um, and the thickness is consistent with the electrode thickness; the length and width of the etching area of the micro-bridge structure are 500um*120um. The electrode of the sample is completed by evaporation of gold, and the etching of the SiC substrate is completed by plasma etching.
[0042]② Carry out Raman spectroscopy test at a specific temperature for the film material to be tested, and perform peak-temperatur...
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Abstract
The invention discloses a semiconductor film thermal conductivity analysis method based on Raman spectrum testing technique, comprising: designing a microbridge structure of a film sample to be tested, and preparing the sample; calibrating a Raman peak of a film material with a temperature offset coefficient; calculating a temperature distribution of an area to be tested of the microbridge of thefilm; and extracting the thermal conductivity of the film by simulation fitting analysis. According to the semiconductor film thermal conductivity analysis method based on the Raman spectrum testing technique, the problem of accurate characterization of thermal conductivity of the semiconductor film material with a particular thickness is solved, the test accuracy is improved and the test cost isreduced, and the research requirement of semiconductor devices for the thermal properties of film materials having a thickness between 100 nanometers and 10 micrometers is met, which has great guidingsignificance for the development of technology for improving device thermal management.
Description
technical field [0001] The invention relates to semiconductor thin film testing technology, in particular to a semiconductor thin film thermal conductivity analysis method based on Raman spectrum testing technology. Background technique [0002] The development trend of semiconductors represented by gallium nitride and gallium arsenide towards high power density is limited by the problem of rising device junction temperature caused by self-heat accumulation effect, which seriously leads to the decline of device performance and reliability. Therefore, the thermal management of devices has become an important research direction in the development and application of high-power devices, and the research on the thermal properties of the device's own materials runs through the entire process of device thermal design, which is an important way to evaluate and guide the development of thermal management. At present, the thermal management technology of semiconductor devices has deve...
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IPC IPC(8): G01N21/65G01N25/20
CPCG01N21/65G01N25/20
Inventor 郭怀新李忠辉尹志军陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD