Preparation method of sensitive thin-film with sandwich structure

A technology of sensitive thin film and sandwich structure, applied in measurement devices, instruments, material analysis by electromagnetic means, etc., can solve the problem of unsatisfactory response speed, degree of response and selectivity, small sensor specific surface area, large sensor volume, etc. problem, to achieve the effect of strong surface activity, short response recovery time, and excellent conductivity

Active Publication Date: 2018-12-21
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most semiconductor-graphene sensitive materials are powder type, but the working temperature is still generally higher than 100°C
Since the powder-type sensitive material needs to be sintered, the volume of the sensor made is relatively large, and the specific surface area of ​​this sensor is smaller than that of the film-type sensor, which is not satisfactory in terms of response speed, response degree and selectivity.

Method used

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  • Preparation method of sensitive thin-film with sandwich structure
  • Preparation method of sensitive thin-film with sandwich structure
  • Preparation method of sensitive thin-film with sandwich structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] 1) Prepare the sol: dissolve cobalt chloride in absolute ethanol, then slowly add isobutyl titanate dropwise, stir evenly with a magnetic force, adjust the pH value to 2.0 with glacial acetic acid to obtain a mixed solution, and add Co 2+ Concentration is 0.1mol / L, Ti 4+The concentration is 0.05mol / L. The mixed solution was reacted in a water bath at 50°C for 30min to obtain CoTiO 3 Precursor solution A.

[0037] 2) Evenly disperse graphene oxide (GO) in absolute ethanol, pretreat with 100W ultrasonic wave for 10min, and obtain ethanol suspension B of graphene oxide, wherein the concentration of graphene oxide in ethanol is 0.5mg / mL;

[0038] 3) Coating on the surface of the clean Si substrate by immersion-pulling method, first dip the Si substrate in CoTiO 3 In the precursor solution A, the immersion time was 1 min, and then pulled at a uniform speed at a controlled pulling rate of 0.5 mm / s, and then the film was dried in an oven at a controlled drying temperature o...

Embodiment 2

[0044] 1) Prepare the sol: dissolve cobalt chloride in absolute ethanol, then slowly add isobutyl titanate dropwise, stir evenly with a magnetic force, adjust the pH value to 4.0 with glacial acetic acid to obtain a mixed solution, and add Co 2+ Concentration is 0.1mol / L, Ti 4+ The concentration is 0.1mol / L. The mixed solution was reacted in a 40°C water bath for 60min to obtain CoTiO 3 Precursor solution A.

[0045] 2) Evenly disperse graphene oxide (GO) in absolute ethanol, pretreat with 100W ultrasonic wave for 10min, and obtain ethanol suspension B of graphene oxide, wherein the concentration of graphene oxide in ethanol is 1mg / mL;

[0046] 3) Coating on the surface of the clean Si substrate by immersion-pulling method, first dip the Si substrate in CoTiO 3 In the precursor solution A, the immersion time was 1 min, and then pulled at a uniform speed at a controlled pulling rate of 1 mm / s, and then the film was dried in an oven at a controlled drying temperature of 40°C ...

Embodiment 3

[0054] 1) Prepare the sol: dissolve cobalt chloride in absolute ethanol, then slowly add isobutyl titanate dropwise, stir evenly with a magnetic force, adjust the pH value to 5.0 with glacial acetic acid to obtain a mixed solution, and add Co 2+ Concentration is 0.2mol / L, Ti 4+ The concentration is 0.2mol / L. The mixed solution was reacted in a 60°C water bath for 50min to obtain CoTiO 3 Precursor solution A.

[0055] 2) Evenly disperse graphene oxide (GO) in absolute ethanol, pretreat with 100W ultrasonic wave for 20min, and obtain ethanol suspension B of graphene oxide, wherein the concentration of graphene oxide in ethanol is 1.5mg / mL;

[0056] 3) Coating on the surface of the clean Si substrate by immersion-pulling method, first dip the Si substrate in CoTiO 3 In the precursor solution A, the immersion time was 1 min, and then pulled at a uniform speed at a controlled pulling rate of 5 mm / s, and then the film was dried in an oven at a controlled drying temperature of 20°...

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Abstract

The invention discloses a preparation method of a sensitive thin-film with a sandwich structure. The preparation method comprises the steps that first a CoTiO3 precursor solution and an ethanol suspension of graphene oxide are prepared, then a CoTiO3 precursor thin-film is plated on the surface of a Si substrate by using a dipping-pulling method, then a GO film layer is plated on the CoTiO3 precursor thin-film, then a CoTiO3 film layer is plated on the CoTiO3 precursor/GO thin-film, and finally calcination is performed to obtain the CoTiO3/rGO/CoTiO3 sensitive thin-film with the sandwich structure. The obtained thin-film exhibits higher sensitivity and selectivity to ethanol gas at operating conditions below 100 DEG C.

Description

technical field [0001] The invention relates to a method for preparing a film sensitive to ethanol gas at a relatively low working temperature, in particular to a method for preparing a film sensitive to sandwich sandwich structure. Background technique [0002] Semiconductor gas-sensitive thin film has significant advantages such as high sensitivity, fast response, good stability, light weight, and easy integration, etc., and meets the requirements of high-tech for compact and portable sensor structure. However, the operating temperature of most semiconductor-type gas-sensitive materials is higher than 200°C, which requires adding a heating device to the sensor, which not only increases energy consumption, makes the sensor structure more complex, but also affects the long-term stability of the signal, and more importantly There may be potential safety hazards when detecting flammable and explosive gases. [0003] Graphene is a material that maintains excellent electrical c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 卢靖谢雷赵振宇王林博梁晨牟妍蓉
Owner SHAANXI UNIV OF SCI & TECH
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