A P-type SE-PERC double-sided solar cell and a preparation method thereof

Abstract

The invention discloses a P-type SE-PERC double-sided solar cell and preparation method thereof, the solar cell includes back electrodes arranged sequentially from bottom to top, A back side silicon nitride film, back alumina film, P-type silicon, N-type silicon, A front silicon nitride film and a positive silver electrode, the front surface of the n-type silicon is formed with a plurality of laser grooves parallel to each other by laser doping after diffusion and before depositing the front surface silicon nitride film, the laser slots are designed with slotted areas with different spacing orwith different slotted areas with different width, the number of laser grooves is equal to the number of positive silver sub-gate electrodes, and one-to-one correspondence, when etching the positivesilver electrode with the positive silicon nitride film, the paste falls in the laser groove to form the positive silver sub-gate electrode, thereby solving the problem that the positive silver sub-gate electrode is not aligned with the laser doped region due to the deformation of the positive silver electrode screen plate in the printing process, and improving the stability of batch production ofthe battery. The invention also discloses a preparation method of the solar cell.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a P-type SE-PERC double-sided solar cell and a preparation method thereof. Background technique [0002] Crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. Under the action, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. [0003] Traditional crystalline silicon solar cells basically only use front passivation technology, depositing a layer of silicon nitride film on the front surface of the silicon wafer by PECVD to reduce the recombination rate of minority carriers on the front surface, which can greatly increase the open circuit voltage and Short-circuit current, thereby improving the photoelectric conversion efficiency of crystalline silicon solar ...

AI Technical Summary

Problems solved by technology

[0006] One of the objectives of the present invention is to provide a P-type SE-PERC double-sided solar cell. After the front side of the solar cell is diffused, a number of parallel laser grooves are formed by laser doping. The design of the groove area or the design of the groove area with different widths can solve the problem of misalignment between the front silver sub-gate electrode and the laser doped area caused by the deformation of the front silver electrode screen during the printing process, and improve the stability of mass production of batteries

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