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Vapor deposition device for preparing silicon monoxide composite anode material and using method thereof

A negative electrode material, silicon monoxide technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of high production cost, non-dense, long time spent, etc., to achieve good practicability, Reduce production cost, good coating effect

Inactive Publication Date: 2018-12-25
DATONG XINCHENG NEW MATERIAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is just to provide silicon monoxide composite anode material preparation vapor deposition device and using method thereof in order to solve the above problems, to solve the low quality of composite material particles prepared by chemical vapor deposition CVD furnace in the prior art, The carbon nanotubes and amorphous carbon coatings wrapped on the surface of the particles are not dense, and the preparation time is relatively long, and the production cost is high.

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  • Vapor deposition device for preparing silicon monoxide composite anode material and using method thereof
  • Vapor deposition device for preparing silicon monoxide composite anode material and using method thereof
  • Vapor deposition device for preparing silicon monoxide composite anode material and using method thereof

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Embodiment Construction

[0038] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be described in detail below. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other implementations obtained by persons of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.

[0039] see Figure 1-Figure 4 As shown, the silicon monoxide composite negative electrode material preparation vapor deposition device provided by the present invention includes a base 1, a crucible tube 2 is fixedly installed on the upper end of the base 1, and an insulating tube cover 4 is sealed and buckled on the upper end of the crucible tube 2, and the insulating tube cover 4 It is used to seal the crucible cylinder 2; the lower end of the crucible cylind...

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Abstract

The invention discloses a vapor deposition device for preparing a silicon oxide composite anode material. The vapor deposition device comprises a base, a crucible cylinder is fixedly installed at theupper end of the base, and an insulating cylinder cover is connected to the upper end of the crucible cylinder in a sealing and buckling mode; a discharging tube, a stirring motor and an intake pipe are installed at the lower end of the crucible cylinder; and an induction coil is wound around the outer wall of the crucible cylinder. The vapor deposition device has the beneficial effects that the vapor deposition device for preparing the silicon oxide composite anode material and a using method thereof can realize the compactness and uniformity of carbon nanotubes and an amorphous carbon coating layer covered on the surface of pulverized particles, the coating effect is good, moreover, the time taken to prepare composite pellets is short, so that the production cost is effectively reduced,and the practicability is good.

Description

technical field [0001] The invention relates to the production field of silicon monoxide composite negative electrode materials, in particular to a gas phase deposition device for preparing silicon monoxide composite negative electrode materials and a method for using the same. Background technique [0002] At present, in the production process of silicon monoxide composite negative electrode materials, the pulverized materials that have been calcined and pulverized for the first time generally need to be placed in a chemical vapor deposition CVD furnace for vapor deposition. The operation steps are: [0003] Put the pulverized material into the chemical vapor deposition CVD furnace, pass in the protective gas nitrogen or argon, the flow rate is 0.5-1.5L / min, and the temperature rise rate is 1-5°C / min, until the deposition temperature is 600-700°C , into the carbon source gas acetylene or liquefied petroleum gas (liquefied petroleum gas), the flow rate is 2-3.5L / min, the tim...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/44
CPCC23C16/26C23C16/4417
Inventor 武建军
Owner DATONG XINCHENG NEW MATERIAL CO LTD