Check patentability & draft patents in minutes with Patsnap Eureka AI!

SnO2 porous thin film with three-level pore structure, and preparation method and application thereof

A technology of porous film and pore structure, which can be applied to devices for coating liquid on surfaces, special surfaces, pretreated surfaces, etc., can solve problems such as performance degradation, many process steps, and increase costs, and achieve high production efficiency and simple process. , the effect of low cost

Active Publication Date: 2018-12-28
WUYI UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has many process steps, which is easy to increase the cost. If some process steps are simply omitted, the performance will decrease

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SnO2 porous thin film with three-level pore structure, and preparation method and application thereof
  • SnO2 porous thin film with three-level pore structure, and preparation method and application thereof
  • SnO2 porous thin film with three-level pore structure, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A kind of SnO with tertiary pore structure 2 The preparation method of porous film, comprises the following steps:

[0038] (1) Preparation of SnO 2-Organic mixed solution: Dissolve the pore forming agent P123 completely in ethanol (magnetic stirring for 30min), then add multi-hole SnO with a diameter of 40nm 2 Nanoparticles, ultrasonic vibration for 60min, multi-hole SnO 2 The nanoparticles are uniformly dispersed in the solution of pore forming agent and ethanol to obtain SnO 2 -organic mixed solution, the porous SnO 2 The ratio of nanoparticles: pore forming agent P123: ethanol is 0.1g: 0.05g: 50mL. The diameter of the through hole (tertiary hole) is 1nm;

[0039] (2) Preparation of porous SnO 2 -Organic hybrid thin film: SnO 2 - The mixed solution of organic matter is evenly coated on the substrate, and baked on the heating plate at 100°C for 10 minutes to obtain porous SnO 2 -Organic mixed film, the aperture of the template used for printing is 20 μm, and t...

Embodiment 2

[0045] A kind of SnO with tertiary pore structure 2 The preparation method of porous film, comprises the following steps:

[0046] (1) Preparation of SnO 2 -Organic mixed solution: Dissolve the pore-forming agent P123 completely in ethanol (magnetic stirring for 60min), then add multi-hole SnO with a diameter of 30nm 2 Nanoparticles, ultrasonic vibration for 60min, multi-hole SnO 2 The nanoparticles are uniformly dispersed in the solution of pore forming agent and ethanol to obtain SnO 2 -organic mixed solution, the porous SnO 2 The ratio of nanoparticles: pore forming agent P123: ethanol is 0.5g: 0.05g: 150mL. The diameter of the through hole (tertiary hole) is 1nm;

[0047] (2) Preparation of porous SnO 2 -Organic hybrid thin film: SnO 2 - The mixed solution of organic matter is evenly coated on the substrate, and baked on the heating plate at 100°C for 20min to obtain porous SnO 2 -Organic mixed film, the aperture of the template used for printing is 20 μm, and the ...

Embodiment 3

[0051] A kind of SnO with tertiary pore structure 2 The preparation method of porous film, comprises the following steps:

[0052] (1) Preparation of SnO 2 -Organic mixed solution: Dissolve pore-forming agent F127 completely in ethanol (magnetic stirring for 45min), then add multi-hole SnO with a diameter of 80nm 2 Nanoparticles, ultrasonic vibration for 120min, multi-hole SnO 2 The nanoparticles are uniformly dispersed in the solution of pore forming agent and ethanol to obtain SnO 2 -organic mixed solution, the porous SnO 2 The ratio of nanoparticles: pore forming agent F127: ethanol is 0.5g: 0.2g: 150mL. The diameter of the through hole (tertiary hole) is 2nm;

[0053] (2) Preparation of porous SnO 2 -Organic hybrid thin film: SnO 2 - The mixed solution of organic matter is evenly coated on the substrate, and baked on the heating plate at 100°C for 20min to obtain porous SnO 2 -Organic mixed film, the pore size is 25 μm, and the distance between the centers of the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses an SnO2 porous thin film with a three-level pore structure. The diameter of first-level pores of the SnO2 porous thin film is 1-5 [mu]m; the diameter of second-level pores is 500-800nm; and the diameter of third-level pores is 1-8nm. A preparation method comprises the following steps of (1) dissolving a pore-forming agent in ethanol, then adding multi-through-hole SnO2 nano-particles, and carrying out ultrasonic concussion to obtain an SnO2-organic matter mixed solution; (2) uniformly coating a substrate with the SnO2-organic matter mixed solution by using a printing technology, and performing baking on a heating electric plate to obtain a porous SnO2-organic matter mixed thin film; and (3) performing first heating, first heat preservation, second heating and secondheat preservation processes on the porous SnO2-organic matter mixed thin film in sequence to obtain the SnO2 porous thin film with the three-level pore structure. The SnO2 porous thin film with the three-level pore structure can be used in the fields of photoelectric sensors, gas-sensitive sensors and the like, and has the advantages of controllable size, good distribution uniformity and the like.

Description

technical field [0001] The invention relates to a porous film and a preparation method thereof, in particular to a SnO film with a tertiary pore structure 2 Porous film and its preparation method and application. Background technique [0002] At present, biomimetic structural materials have become a focus and research hotspot in the field of materials research. Imitating biological structures and preparing materials with biological structures or biolike structures is a good way to obtain high-quality materials. For example, some researchers used the lotus leaf as a template, and used PDMS (polydimethylsiloxane) as a replica on it to prepare a PDMS film with a lotus leaf structure, and then made a flexible strain sensor. The study found that the PDMS flexible strain sensor with the lotus leaf structure has excellent performance, such as high response sensitivity, and the best response time can reach 5s. In the case of a certain detection concentration, it will become very d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B05D1/32B05D3/02B05D5/00B05D7/24C03C17/25
CPCB05D1/32B05D3/0254B05D5/00B05D7/24C03C17/253C03C2218/119C03C2218/32
Inventor 杨为家陈柏桦何鑫陈梅刘俊杰刘铭全王诺媛徐维赵丽特
Owner WUYI UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com