Novel quartz crucible preparation process

Abstract

The invention discloses a novel quartz crucible preparation process, which comprises: (1) raw material preparing; (2) debugging before prefabricating; (3) prefabricating; (4) debugging before melting;and (5) melting. According to the present invention, by controlling the opening / closing of the vacuum valve and the melting condition during the melting, the bubble composite layer with the high micro-bubble content is sandwiched between the transparent layer with the low micro-bubble content and the thin bubble outer layer, such that the uniform radiation on the quartz crucible by the heat source during the crystal pulling operation can be ensured, the bubbles in the bubble composite layer cannot expand and break during the crystal pulling, the reaction between the quartz crucible outer surface bubbles after expansion breaking caused by the long-term crystal pulling and the quartz crucible can be reduced, the crystallization layer forming time after the reaction can be delayed, and the service life of the quartz crucible can be prolonged, wherein the service life of the quartz crucible can be increased to 190 h, and is increased by more than 90 h compared to the conventional quartz crucible so as to meet the crystal pulling process requirements of at least 3-4 single crystal rods.

Description

Technical field: [0001] The invention relates to a preparation process of a quartz crucible, in particular to a novel preparation process of a quartz crucible. Background technique: [0002] Quartz crucible is an essential basic equipment in the process of pulling single crystal silicon. The conventional arc quartz crucible for pulling single crystal is composed of inner layer and outer layer. The proportion of air bubbles is about 1 / 3, and the bubble content is low; the outer layer is a bubble composite layer, whose thickness accounts for about 2 / 3 of the crucible wall thickness, and the air bubble content is high, which is the deformation strength of the supporting crucible, guarantee The part where the heat source radiates evenly. [0003] The melting and drawing of single crystal silicon is carried out in the graphite thermal field, and the temperature of the graphite thermal field is as high as 1600°C. During the long-term and high-temperature use, the bubbles in the o...

AI Technical Summary

Problems solved by technology

[0004] At present, in order to prevent the expansion and rupture of the bubbles in the bubble composite layer of the quartz crucible during the crystal pulling process, resulting in a decrease in the deformation resistance of the quartz crucible and a decrease in thermal radiation efficiency, and an increase in the abnormal rate of the final crystal pull and a decrease in the crystal formation rate, it is usually used in the quartz crucible. Coatings are provided on the inner and outer walls of the crucible to prevent bubbles from bursting and escaping from reacting with the inner surface of the quartz crucible, and to improve the resistance to deformation and heat radiation efficiency of the quartz crucible; however, the coating is easily exposed to external forces during transportation and silicon loading. Peeling, the use effect is not good, and it is easy to affect the quality of crystal pulling

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