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A kind of sapphire c direction crystal growth method

A sapphire and crystal growth technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of easy occurrence of small-angle grain boundaries and large-angle grain boundaries, affecting crystal utilization, and reduce the risk of cracking , Reduce the risk of seed crystal or seed chuck breakage, and reduce the effect of the top bubble range

Active Publication Date: 2021-01-01
ZHEJIANG YUNFENG NEW ENERGY TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Since the current C-direction growth process in the market is mainly for crystals below 80kg, the growth of large-sized crystals is not yet mature. Moreover, C-direction growth is prone to small-angle grain boundaries and large-angle grain boundaries, which affects the utilization rate of crystals.

Method used

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  • A kind of sapphire c direction crystal growth method
  • A kind of sapphire c direction crystal growth method
  • A kind of sapphire c direction crystal growth method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] ①Seed crystal inspection: After receiving the seed crystal, use a polarizer and a strong photoelectric inspection to observe whether there are bubbles, twins and cracks inside the seed crystal. If the seed crystal is found to be unqualified, replace the qualified seed crystal in time to avoid the existence of Too many defects are inherited into the grown crystal, affecting the quality of the crystal.

[0084] ②Charging: Use 450kg of high-purity alumina raw material with a purity of 5N, place it in a crucible, put the crucible into the cavity of the sapphire growth furnace, check whether the thermal field, insulation screen, temperature sensor, etc. of the growth furnace are normal, and then close the furnace The cavity is evacuated.

[0085] ③ Chemical material: When the vacuum degree of the growth furnace reaches 1e-4pa, vacuuming is completed, and the automatic material program is started, in which the power of chemical material increases to 120kw at a rate of 5.33kw / ...

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Abstract

The invention provides a sapphire C-orientation crystal growing method. According to the method, pyramid seedling and crucible crystal growing are adopted, a bubble range on the top of a sapphire crystal can be narrowed, defects of crystal dislocation and the like can be overcome, moreover, and the risk of pulling rate seed crystal breakage or collet breakage when the bottom of the sapphire crystal is stick to a crucible can be reduced, so that the crystal quality is improved, and the crystal utilization rate is improved.

Description

technical field [0001] The invention belongs to the technical field of sapphire single crystal growth, in particular to a C-direction crystal growth method suitable for large-size sapphire in a single crystal furnace. Background technique [0002] Sapphire (α-Al 2 o 3 ) has the characteristics of high hardness, high strength, corrosion resistance, high light transmittance, etc. Since the French scientist Vinal first prepared sapphire crystal in 1890, the preparation technology of artificial sapphire crystal has been developed rapidly, and the crystal quality has been continuously improved. , and the field of application can be greatly broadened. At present, sapphire is widely used in various fields such as civil and military. In the civilian field, sapphire is used in wear-resistant structural parts, medical materials, high-temperature windows, substrate materials in the microelectronics industry, laser matrix materials, optical prisms, mobile phone windows, etc.; in the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B15/00
CPCC30B15/00C30B29/20
Inventor 徐永亮冯微汪海波于海群张国华邱超
Owner ZHEJIANG YUNFENG NEW ENERGY TECH
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